Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films

G. M. Chulcova, N. G. Ptitsina, E. M. Gershenzon, M. E. Gershenzon, A. V. Sergeev

Research output: Contribution to journalArticlepeer-review

Abstract

The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electronphonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Griineisen term at low temperatures (T<40 K).

Original languageEnglish (US)
Pages (from-to)2489-2490
Number of pages2
JournalCzechoslovak Journal of Physics
Volume46
Issue numberSUPPL. 5
DOIs
StatePublished - 1996
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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