Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery

Gang Liu, Yi Xu, Can Xu, Alberto Basile, Feng Wang, Sarit Dhar, Edward Conrad, Patricia Mooney, Torgny Gustafsson, Leonard C. Feldman

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

We report the use of hydrogen annealing to implement the substantial recovery of the a-face (1 1 2¯ 0) crystal structure and the 4H SiC MOSFET inversion layer mobility following material degradation by reactive ion etching (RIE). The results impact the processing of SiC trench MOSFETs where the a-face sidewall forms a significant portion of the conducting semiconductor channel.

Original languageEnglish (US)
Pages (from-to)30-34
Number of pages5
JournalApplied Surface Science
Volume324
DOIs
Publication statusPublished - Jan 1 2015

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Keywords

  • 4H-SiC
  • DLTS
  • Hydrogen etching
  • RIE

Cite this

Liu, G., Xu, Y., Xu, C., Basile, A., Wang, F., Dhar, S., ... Feldman, L. C. (2015). Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery. Applied Surface Science, 324, 30-34. https://doi.org/10.1016/j.apsusc.2014.10.113