Effects of high-temperature anneals and Co60 gamma-ray irradiation on strained silicon on insulator

Keyphrases

• Annealing 66%
• Buried Oxide 33%
• Co-60 100%
• Current-voltage 33%
• Gamma Irradiation 100%
• Hall Mobility 33%
• High Dose 33%
• High Temperature 33%
• High Temperature Anneal 100%
• High-temperature Annealing 33%
• Irradiated Sample 33%
• Irradiation Experiment 33%
• MOSFET 66%
• Photoluminescence 66%
• Si Film 33%
• Strain Relaxation 33%
• Strained Si 33%
• Strained Silicon-on-insulator (sSOI) 100%
• Tenacity 33%
• Ultraviolet Raman 66%

Engineering

• Gamma-Ray Irradiation 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Millisecond 50%
• Silicon on Insulator 100%
• Strain Relaxation 50%