TY - JOUR
T1 - Effects of Mg composition on open circuit voltage of Cu2OMg xZn1-xO heterojunction solar cells
AU - Duan, Ziqing
AU - Du Pasquier, Aurelien
AU - Lu, Yicheng
AU - Xu, Yi
AU - Garfunkel, Eric
N1 - Funding Information:
YL and ZD acknowledge the partial support of the AFOSR DCT grant ( FA9550-08-01–0452 ) and the NSF grant ( ECCS-1002178 ). ADP appreciates the funding from Rutgers TCF and IAMDN. EG and YX acknowledge the support of the NSF.
PY - 2012/1
Y1 - 2012/1
N2 - MgxZn1-xO (0≤x≤0.13) films grown by metal-organic chemical vapor deposition (MOCVD) were chosen as the n-type semiconductor layer forming a heterojunction with electrodeposited p-type cuprous oxide (Cu2O) for photovoltaic applications in this study. We investigated the effects of Mg contents (x) on the performance of AgCu 2OMgxZn1-xOfluorine-doped tin oxide (FTO)-glass heterojunction solar cells, where Ag and FTO are used as top and bottom electrodes, respectively. An enhancement of the open-circuit voltage (V OC) with the increase of x, from 251 mV at x=0 to 570 mV at x=10%, was observed. In order to understand how VOC increases with Mg%, the band alignment between Cu2O and MgxZn1-xO was demonstrated using X-ray photoelectron spectroscopy (XPS) measurements. The result indicates that the conduction band of MgxZn1-xO moves closer to the vacuum level with increasing of x, leading to a decrease of the conduction band offset between MgxZn1-xO and Cu 2O and hence an enhancement of theoretical VOC. Another improvement with the increase of Mg% was realized on the shunt resistance (Rsh) of devices. With the improved VOC and R sh, a relatively high solar power conversion efficiency (ηAM1.5=0.71%) was obtained on the MgxZn 1-xO (x=10%) based solar cell.
AB - MgxZn1-xO (0≤x≤0.13) films grown by metal-organic chemical vapor deposition (MOCVD) were chosen as the n-type semiconductor layer forming a heterojunction with electrodeposited p-type cuprous oxide (Cu2O) for photovoltaic applications in this study. We investigated the effects of Mg contents (x) on the performance of AgCu 2OMgxZn1-xOfluorine-doped tin oxide (FTO)-glass heterojunction solar cells, where Ag and FTO are used as top and bottom electrodes, respectively. An enhancement of the open-circuit voltage (V OC) with the increase of x, from 251 mV at x=0 to 570 mV at x=10%, was observed. In order to understand how VOC increases with Mg%, the band alignment between Cu2O and MgxZn1-xO was demonstrated using X-ray photoelectron spectroscopy (XPS) measurements. The result indicates that the conduction band of MgxZn1-xO moves closer to the vacuum level with increasing of x, leading to a decrease of the conduction band offset between MgxZn1-xO and Cu 2O and hence an enhancement of theoretical VOC. Another improvement with the increase of Mg% was realized on the shunt resistance (Rsh) of devices. With the improved VOC and R sh, a relatively high solar power conversion efficiency (ηAM1.5=0.71%) was obtained on the MgxZn 1-xO (x=10%) based solar cell.
KW - Cuprous oxide (CuO)
KW - Electrodeposition
KW - MOCVD (metal-organic chemical vapor deposition)
KW - Solar cells
KW - Zinc oxide (ZnO)
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U2 - 10.1016/j.solmat.2011.09.047
DO - 10.1016/j.solmat.2011.09.047
M3 - Article
AN - SCOPUS:80855132622
SN - 0927-0248
VL - 96
SP - 292
EP - 297
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
IS - 1
ER -