Effects of Mg on the electrical characteristics and thermal stability of Mgx Zn1-x O thin film transistors

Chieh Jen Ku, Ziqing Duan, Pavel I. Reyes, Yicheng Lu, Yi Xu, Chien Lan Hsueh, Eric Garfunkel

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Abstract

The effects of the Mg composition (x=0, 0.06, and 0.10) on the electrical characteristics and thermal stability of Mgx Zn1-x O thin film transistors (TFTs) are investigated. The Mg0.06 Zn0.94 O TFT shows the smallest subthreshold slope and highest field effect mobility. The O1s spectra of x-ray photoelectron spectroscopy measurements indicate that the oxygen vacancies are reduced in Mg0.06 Zn0.94 O relative to a pure ZnO channel device. Mg0.06 Zn0.94 O TFTs also show higher thermal stability compared to the pure ZnO TFTs, which is mainly attributed to the suppression of oxygen vacancies in the channel.

Original languageEnglish (US)
Article number123511
JournalApplied Physics Letters
Volume98
Issue number12
DOIs
StatePublished - Mar 21 2011

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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