Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation

Francis K. Chai; R. D. Schrimpf; J. R. Brews; D. P. Birnie; K. F. Galloway; R. N. Vogt; M. N. Orr

Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation

Francis K. Chai, R. D. Schrimpf, J. R. Brews, D. P. Birnie, K. F. Galloway, R. N. Vogt, M. N. Orr

Research output: Contribution to journal › Conference article › peer-review

Abstract

Ferroelectric thin film capacitors (FTFCs) are the basic storage element in ferroelectric memory cells. In this paper, the effects of varying film thickness and niobium doping level on electrical properties for memory applications in FTFCs are examined. Reliability issues such as leakage current and fatigue are studied while the niobium doping level is varied. We find that reducing film thickness (in 0.3 μm range) by a factor of 2 should be accompanied by addition of niobium doping up to 5% in order to maintain reliable capacitor operation.

Original language	English (US)
Pages (from-to)	123-125
Number of pages	3
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 1995
Externally published	Yes
Event	Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA Duration: Dec 10 1995 → Dec 13 1995

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation",

abstract = "Ferroelectric thin film capacitors (FTFCs) are the basic storage element in ferroelectric memory cells. In this paper, the effects of varying film thickness and niobium doping level on electrical properties for memory applications in FTFCs are examined. Reliability issues such as leakage current and fatigue are studied while the niobium doping level is varied. We find that reducing film thickness (in 0.3 μm range) by a factor of 2 should be accompanied by addition of niobium doping up to 5% in order to maintain reliable capacitor operation.",

author = "Chai, {Francis K.} and Schrimpf, {R. D.} and Brews, {J. R.} and Birnie, {D. P.} and Galloway, {K. F.} and Vogt, {R. N.} and Orr, {M. N.}",

year = "1995",

language = "English (US)",

pages = "123--125",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 ; Conference date: 10-12-1995 Through 13-12-1995",

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TY - JOUR

T1 - Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation

AU - Chai, Francis K.

AU - Schrimpf, R. D.

AU - Brews, J. R.

AU - Birnie, D. P.

AU - Galloway, K. F.

AU - Vogt, R. N.

AU - Orr, M. N.

PY - 1995

Y1 - 1995

N2 - Ferroelectric thin film capacitors (FTFCs) are the basic storage element in ferroelectric memory cells. In this paper, the effects of varying film thickness and niobium doping level on electrical properties for memory applications in FTFCs are examined. Reliability issues such as leakage current and fatigue are studied while the niobium doping level is varied. We find that reducing film thickness (in 0.3 μm range) by a factor of 2 should be accompanied by addition of niobium doping up to 5% in order to maintain reliable capacitor operation.

AB - Ferroelectric thin film capacitors (FTFCs) are the basic storage element in ferroelectric memory cells. In this paper, the effects of varying film thickness and niobium doping level on electrical properties for memory applications in FTFCs are examined. Reliability issues such as leakage current and fatigue are studied while the niobium doping level is varied. We find that reducing film thickness (in 0.3 μm range) by a factor of 2 should be accompanied by addition of niobium doping up to 5% in order to maintain reliable capacitor operation.

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UR - http://www.scopus.com/inward/citedby.url?scp=0029491451&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029491451

SN - 0163-1918

SP - 123

EP - 125

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1995 International Electron Devices Meeting, IEDM'95

Y2 - 10 December 1995 through 13 December 1995

ER -

Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation

Abstract

All Science Journal Classification (ASJC) codes

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