Electrical characteristics of mocvd deposited Ba1-xSrxTiO3/ YBa2Cu3O7-x ON LaAlO3 Substrate

T. S. Kalkur, S. Liang, Yicheng Lu, C. S. Chern

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Abstract

High dielectric constant material Ba0.6Sr0.4TiO3 (BST) was heteroepitaxially grown over YBa2Cu307-x(YBCO)on Lanthanum aluminate (LaAlO3) substrates. The electrical characteristics of the BST film was studied by depositing electron beam evaporated platinum(Pt). The capacitance-voltage (C-V) measurements at various temperatures up to 100°C show negative temperature coefficient for capacitance, confirming the paraelectric phase. The capacitance vs voltage and current vs voltage characteristics show asymmetry with the polarity of the applied voltage. The asymmetry in the capacitance and current-voltage characteristics can be explained by defect chemistry model of electrode/oxide interface.

Original languageEnglish (US)
Pages (from-to)129-136
Number of pages8
JournalIntegrated Ferroelectrics
Volume11
Issue number1-4
DOIs
StatePublished - Jan 1 1995

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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