Electrical characteristics of mocvd deposited Ba1-xSrxTiO3/ YBa2Cu3O7-x ON LaAlO3 Substrate

T. S. Kalkur, S. Liang, Yicheng Lu, C. S. Chern

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

High dielectric constant material Ba0.6Sr0.4TiO3 (BST) was heteroepitaxially grown over YBa2Cu307-x(YBCO)on Lanthanum aluminate (LaAlO3) substrates. The electrical characteristics of the BST film was studied by depositing electron beam evaporated platinum(Pt). The capacitance-voltage (C-V) measurements at various temperatures up to 100°C show negative temperature coefficient for capacitance, confirming the paraelectric phase. The capacitance vs voltage and current vs voltage characteristics show asymmetry with the polarity of the applied voltage. The asymmetry in the capacitance and current-voltage characteristics can be explained by defect chemistry model of electrode/oxide interface.

Original languageEnglish (US)
Pages (from-to)129-136
Number of pages8
JournalIntegrated Ferroelectrics
Volume11
Issue number1-4
DOIs
StatePublished - Jan 1 1995

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Capacitance
capacitance
Electric potential
electric potential
Substrates
Negative temperature coefficient
Lanthanum
Capacitance measurement
Voltage measurement
asymmetry
Current voltage characteristics
Platinum
Oxides
Electron beams
Permittivity
lanthanum
electrical measurement
polarity
Defects
Electrodes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kalkur, T. S. ; Liang, S. ; Lu, Yicheng ; Chern, C. S. / Electrical characteristics of mocvd deposited Ba1-xSrxTiO3/ YBa2Cu3O7-x ON LaAlO3 Substrate. In: Integrated Ferroelectrics. 1995 ; Vol. 11, No. 1-4. pp. 129-136.
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Electrical characteristics of mocvd deposited Ba1-xSrxTiO3/ YBa2Cu3O7-x ON LaAlO3 Substrate. / Kalkur, T. S.; Liang, S.; Lu, Yicheng; Chern, C. S.

In: Integrated Ferroelectrics, Vol. 11, No. 1-4, 01.01.1995, p. 129-136.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrical characteristics of mocvd deposited Ba1-xSrxTiO3/ YBa2Cu3O7-x ON LaAlO3 Substrate

AU - Kalkur, T. S.

AU - Liang, S.

AU - Lu, Yicheng

AU - Chern, C. S.

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N2 - High dielectric constant material Ba0.6Sr0.4TiO3 (BST) was heteroepitaxially grown over YBa2Cu307-x(YBCO)on Lanthanum aluminate (LaAlO3) substrates. The electrical characteristics of the BST film was studied by depositing electron beam evaporated platinum(Pt). The capacitance-voltage (C-V) measurements at various temperatures up to 100°C show negative temperature coefficient for capacitance, confirming the paraelectric phase. The capacitance vs voltage and current vs voltage characteristics show asymmetry with the polarity of the applied voltage. The asymmetry in the capacitance and current-voltage characteristics can be explained by defect chemistry model of electrode/oxide interface.

AB - High dielectric constant material Ba0.6Sr0.4TiO3 (BST) was heteroepitaxially grown over YBa2Cu307-x(YBCO)on Lanthanum aluminate (LaAlO3) substrates. The electrical characteristics of the BST film was studied by depositing electron beam evaporated platinum(Pt). The capacitance-voltage (C-V) measurements at various temperatures up to 100°C show negative temperature coefficient for capacitance, confirming the paraelectric phase. The capacitance vs voltage and current vs voltage characteristics show asymmetry with the polarity of the applied voltage. The asymmetry in the capacitance and current-voltage characteristics can be explained by defect chemistry model of electrode/oxide interface.

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