Electrical characterization of p-type 6H-SiC layers created by C and Al co-implantation

K. Tone, S. R. Weiner, J. H. Zhao

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6 Scopus citations

Abstract

Advantages of C plus Al co-implantation for p-type doping have been studied comparatively to Al single implantation in 6H-SiC with Al concentrations ranging from 8 x 1019 to 2 x 1021 cm-3. Dramatic reductions are observed in specific contact resistance of Al ohmic contacts made to the C-Al co-implanted layers with the lowest resistance in the range of low 10-5 Ωcm2. The advantage over Al single implantation depends on Al concentration and reaches three orders of magnitude at an Al concentration of 6 x 1020 cm-3. Associated reductions in sheet resistivity are also observed. Hall-effect measurement shows that room-temperature conductivity is dominated by impurity-band conduction, indicating enhancement of acceptor activation efficiency by C and Al co-implantation.

Original languageEnglish (US)
Pages (from-to)689-692
Number of pages4
JournalMaterials Science Forum
Volume264-268
Issue numberPART 2
DOIs
StatePublished - 1998

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Keywords

  • Al
  • C
  • Hall-Effect Measurement
  • Ion Implantation
  • Sheet Resistivity Hole Concentration
  • SiC
  • Specific Contact Resistance
  • Transfer Length Method
  • p-Type Doping

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