Electrical characterization of p-type 6H-SiC layers created by C and Al co-implantation

K. Tone; S. R. Weiner; J. H. Zhao

doi:10.4028/www.scientific.net/msf.264-268.689

Electrical characterization of p-type 6H-SiC layers created by C and Al co-implantation

K. Tone, S. R. Weiner, J. H. Zhao

School of Engineering, Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Advantages of C plus Al co-implantation for p-type doping have been studied comparatively to Al single implantation in 6H-SiC with Al concentrations ranging from 8 x 10¹⁹ to 2 x 10²¹ cm^-3. Dramatic reductions are observed in specific contact resistance of Al ohmic contacts made to the C-Al co-implanted layers with the lowest resistance in the range of low 10^-5 Ωcm². The advantage over Al single implantation depends on Al concentration and reaches three orders of magnitude at an Al concentration of 6 x 10²⁰ cm^-3. Associated reductions in sheet resistivity are also observed. Hall-effect measurement shows that room-temperature conductivity is dominated by impurity-band conduction, indicating enhancement of acceptor activation efficiency by C and Al co-implantation.

Original language	English (US)
Pages (from-to)	689-692
Number of pages	4
Journal	Materials Science Forum
Volume	264-268
Issue number	PART 2
DOIs	https://doi.org/10.4028/www.scientific.net/msf.264-268.689
State	Published - 1998

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Keywords

Al
C
Hall-Effect Measurement
Ion Implantation
Sheet Resistivity Hole Concentration
SiC
Specific Contact Resistance
Transfer Length Method
p-Type Doping

Access to Document

10.4028/www.scientific.net/msf.264-268.689

Cite this

@article{a4f8c003333a48deb5cf9d7ce600c53d,

title = "Electrical characterization of p-type 6H-SiC layers created by C and Al co-implantation",

abstract = "Advantages of C plus Al co-implantation for p-type doping have been studied comparatively to Al single implantation in 6H-SiC with Al concentrations ranging from 8 x 1019 to 2 x 1021 cm-3. Dramatic reductions are observed in specific contact resistance of Al ohmic contacts made to the C-Al co-implanted layers with the lowest resistance in the range of low 10-5 Ωcm2. The advantage over Al single implantation depends on Al concentration and reaches three orders of magnitude at an Al concentration of 6 x 1020 cm-3. Associated reductions in sheet resistivity are also observed. Hall-effect measurement shows that room-temperature conductivity is dominated by impurity-band conduction, indicating enhancement of acceptor activation efficiency by C and Al co-implantation.",

keywords = "Al, C, Hall-Effect Measurement, Ion Implantation, Sheet Resistivity Hole Concentration, SiC, Specific Contact Resistance, Transfer Length Method, p-Type Doping",

author = "K. Tone and Weiner, {S. R.} and Zhao, {J. H.}",

year = "1998",

doi = "10.4028/www.scientific.net/msf.264-268.689",

language = "English (US)",

volume = "264-268",

pages = "689--692",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications",

number = "PART 2",

}

TY - JOUR

T1 - Electrical characterization of p-type 6H-SiC layers created by C and Al co-implantation

AU - Tone, K.

AU - Weiner, S. R.

AU - Zhao, J. H.

PY - 1998

Y1 - 1998

N2 - Advantages of C plus Al co-implantation for p-type doping have been studied comparatively to Al single implantation in 6H-SiC with Al concentrations ranging from 8 x 1019 to 2 x 1021 cm-3. Dramatic reductions are observed in specific contact resistance of Al ohmic contacts made to the C-Al co-implanted layers with the lowest resistance in the range of low 10-5 Ωcm2. The advantage over Al single implantation depends on Al concentration and reaches three orders of magnitude at an Al concentration of 6 x 1020 cm-3. Associated reductions in sheet resistivity are also observed. Hall-effect measurement shows that room-temperature conductivity is dominated by impurity-band conduction, indicating enhancement of acceptor activation efficiency by C and Al co-implantation.

AB - Advantages of C plus Al co-implantation for p-type doping have been studied comparatively to Al single implantation in 6H-SiC with Al concentrations ranging from 8 x 1019 to 2 x 1021 cm-3. Dramatic reductions are observed in specific contact resistance of Al ohmic contacts made to the C-Al co-implanted layers with the lowest resistance in the range of low 10-5 Ωcm2. The advantage over Al single implantation depends on Al concentration and reaches three orders of magnitude at an Al concentration of 6 x 1020 cm-3. Associated reductions in sheet resistivity are also observed. Hall-effect measurement shows that room-temperature conductivity is dominated by impurity-band conduction, indicating enhancement of acceptor activation efficiency by C and Al co-implantation.

KW - Al

KW - C

KW - Hall-Effect Measurement

KW - Ion Implantation

KW - Sheet Resistivity Hole Concentration

KW - SiC

KW - Specific Contact Resistance

KW - Transfer Length Method

KW - p-Type Doping

UR - http://www.scopus.com/inward/record.url?scp=0031698903&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031698903&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/msf.264-268.689

DO - 10.4028/www.scientific.net/msf.264-268.689

M3 - Article

AN - SCOPUS:0031698903

SN - 0255-5476

VL - 264-268

SP - 689

EP - 692

JO - Materials Science Forum

JF - Materials Science Forum

IS - PART 2

ER -

Electrical characterization of p-type 6H-SiC layers created by C and Al co-implantation

Abstract

All Science Journal Classification (ASJC) codes

Keywords

Access to Document

Other files and links

Fingerprint

Cite this