Electronic properties of nitrogen doped hydrogenated amorphous carbon films deposited in an inductively coupled plasma enhanced chemical vapour deposition process by decomposition of methane (CH4) and nitrogen (N2) are reported. In particular, the relation of these properties to the overall field emission performance of an a-C:H:N/Si heterojunction is considered. The heterojunctions have forward to backward rectifying current ratios of 3-4 orders of magnitude. The capacitance as a function of voltage (C-V) characteristics show negligible hysteresis, zero flat band voltage and response up to 13 MHz without loss of the typical depletion transition. The current as a function of voltage (I-V) of the metal (Au)/a-C:H:N/Si are consistent with Fowler-Nordheim type tunnelling of carriers from Si into a-C:H:N. The transition barrier is found to be ∼ 0.07 eV. Which is very close to the previously reported electron emission barrier into vacuum from a-C:H:N. Correlation between the electron emission properties of a-C:H:N/Si heterojunctions and the electronic properties are presented.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry
- Electronic behaviour
- Field emission