@article{69f602ac5a5d4e0683b0bc3462829332,
title = "Electronic correlation determining correlated plasmons in Sb-doped B i2 S e3",
abstract = "Electronic correlation is believed to play an important role in exotic phenomena such as insulator-metal transition, colossal magnetoresistance, and higherature superconductivity in correlated electron systems. Recently, it has been shown that electronic correlation may also be responsible for the formation of unconventional plasmons. Herewith, using a combination of angle-dependent spectroscopic ellipsometry, angle resolved photoemission spectroscopy, and Hall measurements, all as a function of temperature supported by first-principles calculations, the existence of low-loss high-energy correlated plasmons accompanied by spectral weight transfer, a fingerprint of electronic correlation, in topological insulator (Bi0.8Sb0.2)2Se3 is revealed. Upon cooling, the density of free charge carriers in the surface states decreases whereas that in the bulk states increases, and the recently reported correlated plasmons are key to explaining this phenomenon. Our result shows the importance of electronic correlation in determining correlated plasmons and opens an alternative path in engineering plasmonic-based topologically insulating devices.",
author = "Das, {P. K.} and Whitcher, {T. J.} and M. Yang and X. Chi and Feng, {Y. P.} and W. Lin and Chen, {J. S.} and I. Vobornik and J. Fujii and Kokh, {K. A.} and Tereshchenko, {O. E.} and Diao, {C. Z.} and Jisoo Moon and Seongshik Oh and Castro-Neto, {A. H.} and Breese, {M. B.H.} and Wee, {A. T.S.} and A. Rusydi",
note = "Funding Information: We thank Z. Li, E. Chew, H. Miao, W. Wong, W. Zaw, C. Lim, and T. C. Asmara for technical support. This work is supported by 2015 PHC Merlion Project, MOE-AcRF Tier-2 (Grants No. MOE2017-T2-1-135, No. MOE2015-T2-1-099, No. MOE2015-T2-2-065, and No. MOE2015-T2-2-147), the Singapore National Research Foundation under its Competitive Research Funding (Grants No. NRF-CRP 8-2011-06 and No. R-398-000-087-281), and MOE-AcRF Tier 2 (Grants No. R-144-000-398-114, No. R-144-000-368-112, No. R-144-000-346-112, No. R-144-000-364-112, and No. R-144-000-423-114). The authors would also like to acknowledge the Singapore Synchrotron Light Source (SSLS) for providing the facility necessary for conducting the research. The Laboratory is a National Research Infrastructure under the National Research Foundation Singapore via NUS Core Support Grant No. C-380-003-003-001. Centre for Advanced 2D Materials and Graphene Research Centre at the National University of Singapore is acknowledged for providing the computing resource. The work at CNR-IOM APE beamline has been performed in the framework of the nanoscience foundry and fine analysis (NFFA-MIUR Italy Progetti Internazionali) facility. K.A.K and O.E.T. acknowledge financial support by the Russian Science Foundation (Project No. 17-12-01047), in part of crystal growth and structural characterization. Publisher Copyright: {\textcopyright} 2019 American Physical Society.",
year = "2019",
month = sep,
day = "4",
doi = "10.1103/PhysRevB.100.115109",
language = "English (US)",
volume = "100",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics",
number = "11",
}