Electrons in silicon microstructures

R. E. Howard; L. D. Jackel; P. M. Mankiewich; W. J. Skocpol

doi:10.1126/science.231.4736.346

Electrons in silicon microstructures

R. E. Howard, L. D. Jackel, P. M. Mankiewich, W. J. Skocpol

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Silicon microstructures only a few hundred atoms wide can be fabricated and used to study electron transport in narrow channels. Spatially localized voltage probes as dose together as 0.1 micrometer can be used to investigate a variety of physical phenomena, including velocity saturation due to phonon emission, the local potentials caused by scattering from a single trapped electron, and quantum tunneling or hopping among very few electron states.

Original language	English (US)
Pages (from-to)	346-349
Number of pages	4
Journal	Science
Volume	231
Issue number	4736
DOIs	https://doi.org/10.1126/science.231.4736.346
State	Published - Jan 1 1986
Externally published	Yes

All Science Journal Classification (ASJC) codes

General

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title = "Electrons in silicon microstructures",

abstract = "Silicon microstructures only a few hundred atoms wide can be fabricated and used to study electron transport in narrow channels. Spatially localized voltage probes as dose together as 0.1 micrometer can be used to investigate a variety of physical phenomena, including velocity saturation due to phonon emission, the local potentials caused by scattering from a single trapped electron, and quantum tunneling or hopping among very few electron states.",

author = "Howard, {R. E.} and Jackel, {L. D.} and Mankiewich, {P. M.} and Skocpol, {W. J.}",

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