Electrons in silicon microstructures

R. E. Howard, L. D. Jackel, P. M. Mankiewich, W. J. Skocpol

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Silicon microstructures only a few hundred atoms wide can be fabricated and used to study electron transport in narrow channels. Spatially localized voltage probes as dose together as 0.1 micrometer can be used to investigate a variety of physical phenomena, including velocity saturation due to phonon emission, the local potentials caused by scattering from a single trapped electron, and quantum tunneling or hopping among very few electron states.

Original languageEnglish (US)
Pages (from-to)346-349
Number of pages4
JournalScience
Volume231
Issue number4736
DOIs
StatePublished - Jan 1 1986
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General

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