Electrostatic modification of infrared response in gated structures based on VO2

M. M. Qazilbash; Z. Q. Li; V. Podzorov; M. Brehm; F. Keilmann; B. G. Chae; H. T. Kim; D. N. Basov

doi:10.1063/1.2939434

Electrostatic modification of infrared response in gated structures based on VO₂

M. M. Qazilbash, Z. Q. Li, V. Podzorov, M. Brehm, F. Keilmann, B. G. Chae, H. T. Kim, D. N. Basov

School of Arts and Sciences, New High Energy Theory Center

Research output: Contribution to journal › Article › peer-review

65 Scopus citations

Abstract

We investigate the changes in the infrared response due to charge carriers introduced by electrostatic doping of the correlated insulator vanadium dioxide (VO₂) integrated in the architecture of the field effect transistor. Accumulation of holes at the VO₂ interface with the gate dielectric leads to an increase in infrared absorption. This phenomenon is observed only in the insulator-to-metal transition regime of VO₂ with coexisting metallic and insulating regions. We postulate that doped holes lead to the growth of the metallic islands thereby promoting percolation, an effect that persists upon removal of the applied gate voltage.

Original language	English (US)
Article number	241906
Journal	Applied Physics Letters
Volume	92
Issue number	24
DOIs	https://doi.org/10.1063/1.2939434
State	Published - 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2939434

Cite this

@article{ae6876b49cd04d2888a0f93b46d82373,

title = "Electrostatic modification of infrared response in gated structures based on VO2",

abstract = "We investigate the changes in the infrared response due to charge carriers introduced by electrostatic doping of the correlated insulator vanadium dioxide (VO2) integrated in the architecture of the field effect transistor. Accumulation of holes at the VO2 interface with the gate dielectric leads to an increase in infrared absorption. This phenomenon is observed only in the insulator-to-metal transition regime of VO2 with coexisting metallic and insulating regions. We postulate that doped holes lead to the growth of the metallic islands thereby promoting percolation, an effect that persists upon removal of the applied gate voltage.",

author = "Qazilbash, {M. M.} and Li, {Z. Q.} and V. Podzorov and M. Brehm and F. Keilmann and Chae, {B. G.} and Kim, {H. T.} and Basov, {D. N.}",

note = "Funding Information: We thank Sun Jin Yun for a careful reading of the manuscript. We gratefully acknowledge discussions with Amos Sharoni and Ivan K. Schuller. This work was supported by the US Department of Energy and by ETRI.",

year = "2008",

doi = "10.1063/1.2939434",

language = "English (US)",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

}

TY - JOUR

T1 - Electrostatic modification of infrared response in gated structures based on VO2

AU - Qazilbash, M. M.

AU - Li, Z. Q.

AU - Podzorov, V.

AU - Brehm, M.

AU - Keilmann, F.

AU - Chae, B. G.

AU - Kim, H. T.

AU - Basov, D. N.

N1 - Funding Information: We thank Sun Jin Yun for a careful reading of the manuscript. We gratefully acknowledge discussions with Amos Sharoni and Ivan K. Schuller. This work was supported by the US Department of Energy and by ETRI.

PY - 2008

Y1 - 2008

N2 - We investigate the changes in the infrared response due to charge carriers introduced by electrostatic doping of the correlated insulator vanadium dioxide (VO2) integrated in the architecture of the field effect transistor. Accumulation of holes at the VO2 interface with the gate dielectric leads to an increase in infrared absorption. This phenomenon is observed only in the insulator-to-metal transition regime of VO2 with coexisting metallic and insulating regions. We postulate that doped holes lead to the growth of the metallic islands thereby promoting percolation, an effect that persists upon removal of the applied gate voltage.

AB - We investigate the changes in the infrared response due to charge carriers introduced by electrostatic doping of the correlated insulator vanadium dioxide (VO2) integrated in the architecture of the field effect transistor. Accumulation of holes at the VO2 interface with the gate dielectric leads to an increase in infrared absorption. This phenomenon is observed only in the insulator-to-metal transition regime of VO2 with coexisting metallic and insulating regions. We postulate that doped holes lead to the growth of the metallic islands thereby promoting percolation, an effect that persists upon removal of the applied gate voltage.

UR - http://www.scopus.com/inward/record.url?scp=45749118738&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=45749118738&partnerID=8YFLogxK

U2 - 10.1063/1.2939434

DO - 10.1063/1.2939434

M3 - Article

AN - SCOPUS:45749118738

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 241906

ER -

Electrostatic modification of infrared response in gated structures based on VO₂

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this