@inproceedings{e55c6170e7ec4de39aa016d9460d8f6a,
title = "Elimination of BPD in 5~30um thick 4H-SiC epitaxial layers grown in a warm-wall planetary reactor",
abstract = "The process of the epitaxial growth of 4H-SiC has been optimized to obtain higher ratio of conversion of BPDs to the TEDs on 100 mm substrates in a warm-wall planetary reactor. 100% BPD conversion ratio was successfully obtained with excellent surface morphology under optimized growth process. The high efficiency of the optimized growth process in BPD conversion is independent of the initial surface conditions and BPD density of the substrates.",
keywords = "100mm substrates, 4H-SiC epitaxial growth, Basal plane dislocations, Warm-wall planetary reactor",
author = "G. Feng and Sun, {Y. Q.} and Qian, {W. N.} and Lv, {L. P.} and Zhao, {J. H.} and D. Tsai and M. Raghunathan and Y. Fei",
note = "Publisher Copyright: {\textcopyright} 2016 Trans Tech Publications, Switzerland.; 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 ; Conference date: 04-10-2015 Through 09-10-2015",
year = "2016",
doi = "10.4028/www.scientific.net/MSF.858.189",
language = "English (US)",
isbn = "9783035710427",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "189--192",
editor = "Fabrizio Roccaforte and Filippo Giannazzo and {La Via}, Francesco and Roberta Nipoti and Danilo Crippa and Mario Saggio",
booktitle = "Silicon Carbide and Related Materials 2015",
}