Embedded memory capability of four-terminal relay technology

Jaeseok Jeon, Wookhyun Kwon, Tsu Jae King Liu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

An electrostatic four-terminal microrelay is demonstrated to function as a memory cell. This indicates promise for embedding nonvolatile memory with relay-based logic circuits, without incurring additional fabrication cost.

Original languageEnglish (US)
Article number5676190
Pages (from-to)891-894
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume58
Issue number3
DOIs
StatePublished - Mar 1 2011
Externally publishedYes

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Data storage equipment
Logic circuits
Electrostatics
Fabrication
Costs

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Jeon, Jaeseok ; Kwon, Wookhyun ; Liu, Tsu Jae King. / Embedded memory capability of four-terminal relay technology. In: IEEE Transactions on Electron Devices. 2011 ; Vol. 58, No. 3. pp. 891-894.
@article{ef7d426b108f41c78182b698e99048c7,
title = "Embedded memory capability of four-terminal relay technology",
abstract = "An electrostatic four-terminal microrelay is demonstrated to function as a memory cell. This indicates promise for embedding nonvolatile memory with relay-based logic circuits, without incurring additional fabrication cost.",
author = "Jaeseok Jeon and Wookhyun Kwon and Liu, {Tsu Jae King}",
year = "2011",
month = "3",
day = "1",
doi = "10.1109/TED.2010.2097265",
language = "English (US)",
volume = "58",
pages = "891--894",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",

}

Embedded memory capability of four-terminal relay technology. / Jeon, Jaeseok; Kwon, Wookhyun; Liu, Tsu Jae King.

In: IEEE Transactions on Electron Devices, Vol. 58, No. 3, 5676190, 01.03.2011, p. 891-894.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Embedded memory capability of four-terminal relay technology

AU - Jeon, Jaeseok

AU - Kwon, Wookhyun

AU - Liu, Tsu Jae King

PY - 2011/3/1

Y1 - 2011/3/1

N2 - An electrostatic four-terminal microrelay is demonstrated to function as a memory cell. This indicates promise for embedding nonvolatile memory with relay-based logic circuits, without incurring additional fabrication cost.

AB - An electrostatic four-terminal microrelay is demonstrated to function as a memory cell. This indicates promise for embedding nonvolatile memory with relay-based logic circuits, without incurring additional fabrication cost.

UR - http://www.scopus.com/inward/record.url?scp=79952041717&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952041717&partnerID=8YFLogxK

U2 - 10.1109/TED.2010.2097265

DO - 10.1109/TED.2010.2097265

M3 - Article

VL - 58

SP - 891

EP - 894

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 3

M1 - 5676190

ER -