Enhanced near-bandgap response in inp nanopillar solar cells

Corsin Battaglia, Jingsan Xu, Maxwell Zheng, Xingtian Yin, Mark Hettick, Kevin Chen, Nancy Haegel, Ali Javey

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


The effect of nanopillar texturing on the performance of InP solar cells is investigated. Maskless, lithography-free reactive ion etching of InP nanopillars improves the open-circuit voltage, reduces reflectance over a broad spectral range, and enhances the near-bandgap response compared to a flat, non-textured cell with comparable reflectance in the infrared. Electron-beam induced current measurements indicate an increased effective minority carrier collection length. The response at short wavelengths decreases due to the formation of a defective surface layer with strong non-radiative recombination. Plasma oxidation and wet etching partially restore the blue response resulting in a power conversion efficiency of 14.4%.

Original languageEnglish (US)
Article number1400061
JournalAdvanced Energy Materials
Issue number10
StatePublished - Jul 15 2014

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)


  • InP
  • nanopillars
  • photovoltaics
  • reactive ion etching
  • surface recombination

Fingerprint Dive into the research topics of 'Enhanced near-bandgap response in inp nanopillar solar cells'. Together they form a unique fingerprint.

Cite this