Enhancement-mode ZnO/Mg0.5Zn0.5O HFET on Si

Daqian Ye, Zengxia Mei, Huili Liang, Junqiang Li, Yaonan Hou, Changzhi Gu, Alexander Azarov, Andrej Kuznetsov, Wen Chiang Hong, Yicheng Lu, Xiaolong Du

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9 Scopus citations


We report a bottom-gate and enhancement-mode ZnO/Mg0.5Zn 0.5O heterojunction field effect transistor (HFET) on Si. This new heterostructure which is grown by using molecular beam epitaxy (MBE) reduces interface defects and traps. By tailoring Mg composition (x) in the Mg xZn1-xO barrier layer up to 50%, the Mg 0.5Zn0.5O exhibits insulating properties and the resultant HFET works in an enhancement mode with a field effective mobility of μFE=21cm2V-1s-1, transconductance of gm=44mSmm-1, on/off ratio of 1 105 and off current ∼1.33 10-8Amm-1. The device shows good ambient stability.

Original languageEnglish (US)
Article number255101
JournalJournal of Physics D: Applied Physics
Issue number25
StatePublished - Jun 25 2014

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films


  • HFET
  • ZnO/MgZnO
  • bottom-gate
  • enhancement


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