We report a bottom-gate and enhancement-mode ZnO/Mg0.5Zn 0.5O heterojunction field effect transistor (HFET) on Si. This new heterostructure which is grown by using molecular beam epitaxy (MBE) reduces interface defects and traps. By tailoring Mg composition (x) in the Mg xZn1-xO barrier layer up to 50%, the Mg 0.5Zn0.5O exhibits insulating properties and the resultant HFET works in an enhancement mode with a field effective mobility of μFE=21cm2V-1s-1, transconductance of gm=44mSmm-1, on/off ratio of 1 105 and off current ∼1.33 10-8Amm-1. The device shows good ambient stability.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films