Epitaxial growth of multiferroic YMnO 3 on GaN

A. Posadas, J. B. Yau, C. H. Ahn, J. Han, S. Gariglio, K. Johnston, Karin Rabe, J. B. Neaton

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In this work, we report on the epitaxial growth of multiferroic YMn O3 on GaN. Both materials are hexagonal with a nominal lattice mismatch of 4%, yet x-ray diffraction reveals an unexpected 30° rotation between the unit cells of YMn O3 and GaN that results in a much larger lattice mismatch (10%) compared to the unrotated case. Estimates based on first principles calculations show that the bonding energy gained from the rotated atomic arrangement compensates for the increase in strain energy due to the larger lattice mismatch. Understanding the energy competition between chemical bonding energy and strain energy provides insight into the heteroepitaxial growth mechanisms of complex oxide-semiconductor systems.

Original languageEnglish (US)
Article number171915
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number17
StatePublished - Oct 24 2005

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Posadas, A., Yau, J. B., Ahn, C. H., Han, J., Gariglio, S., Johnston, K., Rabe, K., & Neaton, J. B. (2005). Epitaxial growth of multiferroic YMnO 3 on GaN. Applied Physics Letters, 87(17), 1-3. [171915]. https://doi.org/10.1063/1.2120903