Epitaxial ZnO piezoelectric films for RF filters

Nuri W. Emanetoglu, Yicheng Lu, Chandrasekhar Gorla, Ying Liu, Shaohua Liang, William Mayo

Research output: Contribution to journalConference articlepeer-review

Abstract

ZnO has high piezoelectric coupling coefficient and acoustic velocity; therefore, it is an attractive material candidate for high frequency and low loss filters. Piezoelectric ZnO thin film based RF devices offer the advantages such as low power consumption, circuit miniaturization and cost reduction through integration with main stream MMIC technology. We report CVD growth of epitaxial ZnO thin films on R-sapphire substrates. X-ray diffraction techniques have been used to study the crystallinity and orientation of the films, as well as the epitaxial relationship between the films and the substrate. High-resolution cross-sectional TEM reveals the atomically sharp interface structure. As grown ZnO films exhibit dominant n-type conductivity due to the oxygen vacancies. Excellent piezoelectricity has been achieved through a multi-step Li diffusion under oxygen ambient. Surface Acoustic Wave (SAW) filters with 10-micron wavelength have been fabricated. Low insertion loss and high piezoelectric coupling coefficient have been observed.

Original languageEnglish (US)
Pages (from-to)353-357
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume495
StatePublished - 1998
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 30 1997Dec 4 1997

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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