Erratum: Synthesis of nitrogen passivated rare-earth doped hafnia thin films and high temperature electrochemical conduction studies (Journal of Vacuum Science and Technology B: Mucroelectronics and Nanometer (2008) 26 (L33))

Shriram Ramanathan; Annamalai Karthikeyan; S. A. Govindarajan; Paul D. Kirsh

doi:10.1116/1.3054289

Erratum: Synthesis of nitrogen passivated rare-earth doped hafnia thin films and high temperature electrochemical conduction studies (Journal of Vacuum Science and Technology B: Mucroelectronics and Nanometer (2008) 26 (L33))

Shriram Ramanathan, Annamalai Karthikeyan, S. A. Govindarajan, Paul D. Kirsh

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English (US)
Pages (from-to)	198
Number of pages	1
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	1
DOIs	https://doi.org/10.1116/1.3054289
State	Published - 2009
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.3054289

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Ramanathan, S., Karthikeyan, A., Govindarajan, S. A., & Kirsh, P. D. (2009). Erratum: Synthesis of nitrogen passivated rare-earth doped hafnia thin films and high temperature electrochemical conduction studies (Journal of Vacuum Science and Technology B: Mucroelectronics and Nanometer (2008) 26 (L33)). Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27(1), 198. https://doi.org/10.1116/1.3054289

Ramanathan, Shriram ; Karthikeyan, Annamalai ; Govindarajan, S. A. et al. / Erratum : Synthesis of nitrogen passivated rare-earth doped hafnia thin films and high temperature electrochemical conduction studies (Journal of Vacuum Science and Technology B: Mucroelectronics and Nanometer (2008) 26 (L33)). In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2009 ; Vol. 27, No. 1. pp. 198.

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author = "Shriram Ramanathan and Annamalai Karthikeyan and Govindarajan, {S. A.} and Kirsh, {Paul D.}",

year = "2009",

doi = "10.1116/1.3054289",

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Ramanathan, S, Karthikeyan, A, Govindarajan, SA & Kirsh, PD 2009, 'Erratum: Synthesis of nitrogen passivated rare-earth doped hafnia thin films and high temperature electrochemical conduction studies (Journal of Vacuum Science and Technology B: Mucroelectronics and Nanometer (2008) 26 (L33))', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 27, no. 1, pp. 198. https://doi.org/10.1116/1.3054289

Erratum: Synthesis of nitrogen passivated rare-earth doped hafnia thin films and high temperature electrochemical conduction studies (Journal of Vacuum Science and Technology B: Mucroelectronics and Nanometer (2008) 26 (L33)). / Ramanathan, Shriram; Karthikeyan, Annamalai; Govindarajan, S. A. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, No. 1, 2009, p. 198.

Research output: Contribution to journal › Comment/debate › peer-review

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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Ramanathan S, Karthikeyan A, Govindarajan SA, Kirsh PD. Erratum: Synthesis of nitrogen passivated rare-earth doped hafnia thin films and high temperature electrochemical conduction studies (Journal of Vacuum Science and Technology B: Mucroelectronics and Nanometer (2008) 26 (L33)). Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2009;27(1):198. doi: 10.1116/1.3054289

Erratum: Synthesis of nitrogen passivated rare-earth doped hafnia thin films and high temperature electrochemical conduction studies (Journal of Vacuum Science and Technology B: Mucroelectronics and Nanometer (2008) 26 (L33))

All Science Journal Classification (ASJC) codes

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