Etching of silicon by the RCA Standard Clean 1

G. K. Celler; D. L. Barr; J. M. Rosamilia

doi:10.1149/1.1390954

Etching of silicon by the RCA Standard Clean 1

G. K. Celler, D. L. Barr, J. M. Rosamilia

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

It is known that the RCA Standard Clean 1, which is used repeatedly during device fabrication, can cause etching of Si. In some process flows, such etching can be important when fabricating devices with thin films, for example, in silicon-on-insulator technology. We show that 25-30 angstroms of Si is etched away by a modified version of the SC1 clean (1:8:64 parts by weight of NH₄OH, H₂O₂, and H₂O), when it is applied for 10 min to a bare Si layer on top of SiO₂.

Original language	English (US)
Pages (from-to)	47-49
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	3
Issue number	1
DOIs	https://doi.org/10.1149/1.1390954
State	Published - Jan 2000
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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abstract = "It is known that the RCA Standard Clean 1, which is used repeatedly during device fabrication, can cause etching of Si. In some process flows, such etching can be important when fabricating devices with thin films, for example, in silicon-on-insulator technology. We show that 25-30 angstroms of Si is etched away by a modified version of the SC1 clean (1:8:64 parts by weight of NH4OH, H2O2, and H2O), when it is applied for 10 min to a bare Si layer on top of SiO2.",

author = "Celler, {G. K.} and Barr, {D. L.} and Rosamilia, {J. M.}",

year = "2000",

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AB - It is known that the RCA Standard Clean 1, which is used repeatedly during device fabrication, can cause etching of Si. In some process flows, such etching can be important when fabricating devices with thin films, for example, in silicon-on-insulator technology. We show that 25-30 angstroms of Si is etched away by a modified version of the SC1 clean (1:8:64 parts by weight of NH4OH, H2O2, and H2O), when it is applied for 10 min to a bare Si layer on top of SiO2.

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Etching of silicon by the RCA Standard Clean 1

Abstract

All Science Journal Classification (ASJC) codes

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