Etching of silicon by the RCA Standard Clean 1

George Celler, D. L. Barr, J. M. Rosamilia

Research output: Contribution to journalArticle

35 Scopus citations

Abstract

It is known that the RCA Standard Clean 1, which is used repeatedly during device fabrication, can cause etching of Si. In some process flows, such etching can be important when fabricating devices with thin films, for example, in silicon-on-insulator technology. We show that 25-30 angstroms of Si is etched away by a modified version of the SC1 clean (1:8:64 parts by weight of NH4OH, H2O2, and H2O), when it is applied for 10 min to a bare Si layer on top of SiO2.

Original languageEnglish (US)
Pages (from-to)47-49
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume3
Issue number1
DOIs
StatePublished - Jan 1 2000
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering
  • Electrochemistry

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