Among one-dimensional transition-metal trichalcogenides, TaSe3 is unconventional in many respects. One is its strong topological semimetallicity as predicted by first-principles calculations. We report the experimental investigations of the electronic properties of one-dimensional-like TaSe3 single crystals. While the b-axis electrical resistivity shows good metallicity with a high residual resistivity ratio greater than 100, an extremely large magnetoresistance is observed reaching ≈7 × 103% at 1.9 K for 14 T. Interestingly, the magnetoresistance follows the Kohler’s rule with nearly quadratic magnetic field dependence, consistent with the electron–hole compensation scenario as confirmed by our Hall conductivity data. Both the longitudinal and Hall conductivities show Shubnikov-de Haas oscillations with two frequencies: Fα ≈ 97 T and Fβ ≈ 186 T. Quantitative analysis indicates that Fα results from the two-dimensional-like electron band with the non-trivial Berry phase [1.1π], and Fβ from the hole band with the trivial Berry phase [0(3D) − 0.16π(2D)]. Our experimental findings are consistent with the predictions based on first-principles calculations.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics