TY - JOUR
T1 - Evidence for topological semimetallicity in a chain-compound TaSe3
AU - Saleheen, Ahmad Ikhwan Us
AU - Chapai, Ramakanta
AU - Xing, Lingyi
AU - Nepal, Roshan
AU - Gong, Dongliang
AU - Gui, Xin
AU - Xie, Weiwei
AU - Young, David P.
AU - Plummer, E. W.
AU - Jin, Rongying
N1 - Funding Information:
We sincerely thank Simin Nie, Zhijun Wang, and Mohammad Saghayezhian for fruitful discussion. This work was primarily supported by the U.S. Department of Energy under EPSCoR Grant No. DE-SC0012432 with additional support from the Louisiana Board of Regents. R.N., E.W.P., and R.J. also acknowledge the support by the National Science Foundation through DMR-1504226.
Publisher Copyright:
© 2020, The Author(s).
PY - 2020/12/1
Y1 - 2020/12/1
N2 - Among one-dimensional transition-metal trichalcogenides, TaSe3 is unconventional in many respects. One is its strong topological semimetallicity as predicted by first-principles calculations. We report the experimental investigations of the electronic properties of one-dimensional-like TaSe3 single crystals. While the b-axis electrical resistivity shows good metallicity with a high residual resistivity ratio greater than 100, an extremely large magnetoresistance is observed reaching ≈7 × 103% at 1.9 K for 14 T. Interestingly, the magnetoresistance follows the Kohler’s rule with nearly quadratic magnetic field dependence, consistent with the electron–hole compensation scenario as confirmed by our Hall conductivity data. Both the longitudinal and Hall conductivities show Shubnikov-de Haas oscillations with two frequencies: Fα ≈ 97 T and Fβ ≈ 186 T. Quantitative analysis indicates that Fα results from the two-dimensional-like electron band with the non-trivial Berry phase [1.1π], and Fβ from the hole band with the trivial Berry phase [0(3D) − 0.16π(2D)]. Our experimental findings are consistent with the predictions based on first-principles calculations.
AB - Among one-dimensional transition-metal trichalcogenides, TaSe3 is unconventional in many respects. One is its strong topological semimetallicity as predicted by first-principles calculations. We report the experimental investigations of the electronic properties of one-dimensional-like TaSe3 single crystals. While the b-axis electrical resistivity shows good metallicity with a high residual resistivity ratio greater than 100, an extremely large magnetoresistance is observed reaching ≈7 × 103% at 1.9 K for 14 T. Interestingly, the magnetoresistance follows the Kohler’s rule with nearly quadratic magnetic field dependence, consistent with the electron–hole compensation scenario as confirmed by our Hall conductivity data. Both the longitudinal and Hall conductivities show Shubnikov-de Haas oscillations with two frequencies: Fα ≈ 97 T and Fβ ≈ 186 T. Quantitative analysis indicates that Fα results from the two-dimensional-like electron band with the non-trivial Berry phase [1.1π], and Fβ from the hole band with the trivial Berry phase [0(3D) − 0.16π(2D)]. Our experimental findings are consistent with the predictions based on first-principles calculations.
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U2 - 10.1038/s41535-020-00257-7
DO - 10.1038/s41535-020-00257-7
M3 - Article
AN - SCOPUS:85088500634
VL - 5
JO - npj Quantum Materials
JF - npj Quantum Materials
SN - 2397-4648
IS - 1
M1 - 53
ER -