Evolution of the electronic Raman scattering of high-Tc superconductors with doping

G. Blumberg, Moonsoo Kang, M. V. Klein

Research output: Contribution to journalConference articlepeer-review

Abstract

For Bi2Sr2CaCu2O8±δ superconductors electronic Raman scattering from high- and low-energy excitations has been studied in relation to the hole doping level, temperature and energy of the incident photons. For underdoped superconductors we conclude that: short range antiferromagnetic correlations persist with hole doping; the holes bind in local preformed pairs of B1g symmetry and 600 cm-1 binding energy; the pair concentration increases with temperature reduction until they gain partial coherence and condense into a collective superconducting state.

Original languageEnglish (US)
Pages (from-to)1017-1018
Number of pages2
JournalPhysica C: Superconductivity and its applications
Volume282-287
Issue numberpt 2
DOIs
StatePublished - 1997
Externally publishedYes
EventProceedings of the International Conference on Materials and Mechanisms of Superconductivity High Temperature Superconductors V. Part 2 ( of 4) - Beijing, China
Duration: Feb 28 1997Mar 4 1997

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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