The authors have examined the role of sub nanometer La2 O3 and LaN cap layers interposed in SiHf O2 TiN high- k gate dielectric stacks in tuning the flatband and threshold voltages of capacitors and transistors. High performance, band edge n metal oxide field effect transistors with channel lengths down to 60 nm may be fabricated without significant compromise in mobility, electrical thickness, and threshold voltage. They have carried out a microstructural evaluation of these stacks and correlated these results with the electrical behavior of the devices.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - 2007|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)