Experimental study of ALD HfO2 deposited on strained Silicon-on-insulator (sSOI & xsSOI) and SOI

D. Gu; K. Tapily; P. Shrestha; G. Celler; H. Baumgart

doi:10.1149/1.2779578

Experimental study of ALD HfO₂ deposited on strained Silicon-on-insulator (sSOI & xsSOI) and SOI

D. Gu, K. Tapily, P. Shrestha, G. Celler, H. Baumgart

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

4 nm HfO₂ films are deposited on silicon-on-insulator (SOI) with various amounts of lattice strain and thickness by atomic layer deposition (ALD). After post deposition annealing (PDA), the samples are studied by Rutherford backscaftering spectroscopy (RBS), high-resolution transmission electron microscopy (HRTEM), electron energy-loss spectroscopy (EELS), and x-ray photoelectron spectroscopy (XPS). The as-deposited HfO₂ film shows good stoichiometry and thickness uniformity. HRTEM images show that while HfO₂ films on non-strained SOI becomes poly-crystalline after PDA at 600°C, HfO₂ films on strained SOI still keep amorphous. The strain SOI also suppresses the IL growth during PDA. The EELS and XPS results confirm the interdiffusion across the HfO₂/Si interface. The XPS data also show that formation of Hf-O-Si bonds depend on the SOI lattice strain and thickness. The SOI thickness is critical to reduce the formation of silicate m the IL.

Original language	English (US)
Title of host publication	ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
Pages	421-429
Number of pages	9
Edition	4
DOIs	https://doi.org/10.1149/1.2779578
State	Published - 2007
Externally published	Yes
Event	5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States Duration: Oct 8 2007 → Oct 10 2007

Publication series

Name	ECS Transactions
Number	4
Volume	11
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
Country/Territory	United States
City	Washington, DC
Period	10/8/07 → 10/10/07

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/1.2779578

Cite this

@inproceedings{90210568c4fe4fe1b1f85c87d10946fa,

title = "Experimental study of ALD HfO2 deposited on strained Silicon-on-insulator (sSOI & xsSOI) and SOI",

abstract = "4 nm HfO2 films are deposited on silicon-on-insulator (SOI) with various amounts of lattice strain and thickness by atomic layer deposition (ALD). After post deposition annealing (PDA), the samples are studied by Rutherford backscaftering spectroscopy (RBS), high-resolution transmission electron microscopy (HRTEM), electron energy-loss spectroscopy (EELS), and x-ray photoelectron spectroscopy (XPS). The as-deposited HfO2 film shows good stoichiometry and thickness uniformity. HRTEM images show that while HfO2 films on non-strained SOI becomes poly-crystalline after PDA at 600°C, HfO2 films on strained SOI still keep amorphous. The strain SOI also suppresses the IL growth during PDA. The EELS and XPS results confirm the interdiffusion across the HfO2/Si interface. The XPS data also show that formation of Hf-O-Si bonds depend on the SOI lattice strain and thickness. The SOI thickness is critical to reduce the formation of silicate m the IL.",

author = "D. Gu and K. Tapily and P. Shrestha and G. Celler and H. Baumgart",

year = "2007",

doi = "10.1149/1.2779578",

language = "English (US)",

isbn = "9781566775700",

series = "ECS Transactions",

number = "4",

pages = "421--429",

booktitle = "ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks",

edition = "4",

note = "5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting ; Conference date: 08-10-2007 Through 10-10-2007",

}

Gu, D, Tapily, K, Shrestha, P, Celler, G & Baumgart, H 2007, Experimental study of ALD HfO₂ deposited on strained Silicon-on-insulator (sSOI & xsSOI) and SOI. in ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4 edn, ECS Transactions, no. 4, vol. 11, pp. 421-429, 5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting, Washington, DC, United States, 10/8/07. https://doi.org/10.1149/1.2779578

Experimental study of ALD HfO₂ deposited on strained Silicon-on-insulator (sSOI & xsSOI) and SOI. / Gu, D.; Tapily, K.; Shrestha, P. et al.
ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4. ed. 2007. p. 421-429 (ECS Transactions; Vol. 11, No. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Experimental study of ALD HfO2 deposited on strained Silicon-on-insulator (sSOI & xsSOI) and SOI

AU - Gu, D.

AU - Tapily, K.

AU - Shrestha, P.

AU - Celler, G.

AU - Baumgart, H.

PY - 2007

Y1 - 2007

N2 - 4 nm HfO2 films are deposited on silicon-on-insulator (SOI) with various amounts of lattice strain and thickness by atomic layer deposition (ALD). After post deposition annealing (PDA), the samples are studied by Rutherford backscaftering spectroscopy (RBS), high-resolution transmission electron microscopy (HRTEM), electron energy-loss spectroscopy (EELS), and x-ray photoelectron spectroscopy (XPS). The as-deposited HfO2 film shows good stoichiometry and thickness uniformity. HRTEM images show that while HfO2 films on non-strained SOI becomes poly-crystalline after PDA at 600°C, HfO2 films on strained SOI still keep amorphous. The strain SOI also suppresses the IL growth during PDA. The EELS and XPS results confirm the interdiffusion across the HfO2/Si interface. The XPS data also show that formation of Hf-O-Si bonds depend on the SOI lattice strain and thickness. The SOI thickness is critical to reduce the formation of silicate m the IL.

AB - 4 nm HfO2 films are deposited on silicon-on-insulator (SOI) with various amounts of lattice strain and thickness by atomic layer deposition (ALD). After post deposition annealing (PDA), the samples are studied by Rutherford backscaftering spectroscopy (RBS), high-resolution transmission electron microscopy (HRTEM), electron energy-loss spectroscopy (EELS), and x-ray photoelectron spectroscopy (XPS). The as-deposited HfO2 film shows good stoichiometry and thickness uniformity. HRTEM images show that while HfO2 films on non-strained SOI becomes poly-crystalline after PDA at 600°C, HfO2 films on strained SOI still keep amorphous. The strain SOI also suppresses the IL growth during PDA. The EELS and XPS results confirm the interdiffusion across the HfO2/Si interface. The XPS data also show that formation of Hf-O-Si bonds depend on the SOI lattice strain and thickness. The SOI thickness is critical to reduce the formation of silicate m the IL.

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