Experimental study of ALD HfO2 deposited on strained Silicon-on-insulator (sSOI & xsSOI) and SOI

D. Gu, K. Tapily, P. Shrestha, G. Celler, H. Baumgart

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

4 nm HfO2 films are deposited on silicon-on-insulator (SOI) with various amounts of lattice strain and thickness by atomic layer deposition (ALD). After post deposition annealing (PDA), the samples are studied by Rutherford backscaftering spectroscopy (RBS), high-resolution transmission electron microscopy (HRTEM), electron energy-loss spectroscopy (EELS), and x-ray photoelectron spectroscopy (XPS). The as-deposited HfO2 film shows good stoichiometry and thickness uniformity. HRTEM images show that while HfO2 films on non-strained SOI becomes poly-crystalline after PDA at 600°C, HfO2 films on strained SOI still keep amorphous. The strain SOI also suppresses the IL growth during PDA. The EELS and XPS results confirm the interdiffusion across the HfO2/Si interface. The XPS data also show that formation of Hf-O-Si bonds depend on the SOI lattice strain and thickness. The SOI thickness is critical to reduce the formation of silicate m the IL.

Original languageEnglish (US)
Title of host publicationECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
PublisherElectrochemical Society Inc.
Pages421-429
Number of pages9
Edition4
ISBN (Electronic)9781566775700
ISBN (Print)9781566775700
DOIs
StatePublished - 2007
Externally publishedYes
Event5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States
Duration: Oct 8 2007Oct 10 2007

Publication series

NameECS Transactions
Number4
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
Country/TerritoryUnited States
CityWashington, DC
Period10/8/0710/10/07

All Science Journal Classification (ASJC) codes

  • General Engineering

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