Abstract
The procedures found to lead to good tunnel junctions on the Al5 superconductor Nb-Sn are described. The use of an acetic acid atmosphere and/or oxidized Si layer barriers is shown to be particularly effective. The role of excess Sn in good oxide barrier formation on bare Nb-Sn is discussed. These results are related to earlier work using oxidized Si barriers on V3Si.
Original language | English (US) |
---|---|
Pages (from-to) | 582-584 |
Number of pages | 3 |
Journal | IEEE Transactions on Magnetics |
Volume | 15 |
Issue number | 1 |
DOIs | |
State | Published - 1979 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering