Fabrication and barrier diagnostics of superconductive tunnel junctions on Nb-Sn and V-Si

D. A. Rudman, R. E. Howard, D. F. Moore, R. B. Zubeck, M. R. Beasley

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Abstract

The procedures found to lead to good tunnel junctions on the Al5 superconductor Nb-Sn are described. The use of an acetic acid atmosphere and/or oxidized Si layer barriers is shown to be particularly effective. The role of excess Sn in good oxide barrier formation on bare Nb-Sn is discussed. These results are related to earlier work using oxidized Si barriers on V3Si.

Original languageEnglish (US)
Pages (from-to)582-584
Number of pages3
JournalIEEE Transactions on Magnetics
Volume15
Issue number1
DOIs
StatePublished - Jan 1 1979
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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