Fabrication and barrier diagnostics of superconductive tunnel junctions on Nb-Sn and V-Si

D. A. Rudman; R. E. Howard; D. F. Moore; R. B. Zubeck; M. R. Beasley

doi:10.1109/TMAG.1979.1060080

Fabrication and barrier diagnostics of superconductive tunnel junctions on Nb-Sn and V-Si

D. A. Rudman, R. E. Howard, D. F. Moore, R. B. Zubeck, M. R. Beasley

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

The procedures found to lead to good tunnel junctions on the Al5 superconductor Nb-Sn are described. The use of an acetic acid atmosphere and/or oxidized Si layer barriers is shown to be particularly effective. The role of excess Sn in good oxide barrier formation on bare Nb-Sn is discussed. These results are related to earlier work using oxidized Si barriers on V₃Si.

Original language	English (US)
Pages (from-to)	582-584
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	15
Issue number	1
DOIs	https://doi.org/10.1109/TMAG.1979.1060080
State	Published - 1979
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.1979.1060080

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AU - Beasley, M. R.

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AB - The procedures found to lead to good tunnel junctions on the Al5 superconductor Nb-Sn are described. The use of an acetic acid atmosphere and/or oxidized Si layer barriers is shown to be particularly effective. The role of excess Sn in good oxide barrier formation on bare Nb-Sn is discussed. These results are related to earlier work using oxidized Si barriers on V3Si.

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Fabrication and barrier diagnostics of superconductive tunnel junctions on Nb-Sn and V-Si

Abstract

All Science Journal Classification (ASJC) codes

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