The procedures found to lead to good tunnel junctions on the Al5 superconductor Nb-Sn are described. The use of an acetic acid atmosphere and/or oxidized Si layer barriers is shown to be particularly effective. The role of excess Sn in good oxide barrier formation on bare Nb-Sn is discussed. These results are related to earlier work using oxidized Si barriers on V3Si.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering