@inproceedings{c64ba7621e6a47fbac64b16e6dc87038,
title = "Fabrication and characterization of 4H-SiC 6kV gate turn-off thyristor",
abstract = "In this paper, we report a 0.1cm2 4H-SiC gate-turn-off (GTO) thyristor with 6 kV blocking voltage fabricated on a structure with a 60μm drift layer. A relatively large area, high voltage 4H-SiC GTO that exhibits encouraging characteristic at the on- and off-states, and a low leakage current with 63% devices blocking 3kV or higher. Initial pulse testing result shows that the fabricated GTOs are capable of both high current density and high speed of turn-off.",
keywords = "4H-SiC, GTO, High voltage, MJTE, Thyristors",
author = "Lei Lin and Zhao, {Jian H.}",
year = "2012",
doi = "10.4028/www.scientific.net/MSF.717-720.1163",
language = "English (US)",
isbn = "9783037854198",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "1163--1166",
editor = "Devaty, {Robert P.} and Michael Dudley and Chow, {T. Paul} and Neudeck, {Philip G.}",
booktitle = "Silicon Carbide and Related Materials 2011, ICSCRM 2011",
note = "14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 ; Conference date: 11-09-2011 Through 16-09-2011",
}