Fabrication and characterization of 6H-SiC switching devices

K. Xie, Jian Zhao, J. Flemish, T. Burke, W. Buchwald, L. Kingsley, H. Singh, M. Weiner

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

Various 6H-SiC switches, including Schottky diodes, p+n diodes and thyristors have been fabricated and characterized using optical and electrical triggering. Mesa etching is accomplished by electron cyclotron resonant reactive ion etching using CF4 and O2 mixture, with a high etch rate of 80 nm/min and an excellent surface morphology. The optical triggering by 266 nm laser light yields a near 100% switching efficiency in Pt and Au 6H-SiC Schottky diode switches, and a 75% switching efficiency in p+n 6H-SiC diode switches. A breakdown field of more than 1×106 V/cm is obtained in p+n diode. Operation of SiC thyristor is demonstrated. A relatively long turn-on time of 170 ns is believed to be due to a long base region and a short carrier lifetime in 6H-SiC.

Original languageEnglish (US)
Pages821-824
Number of pages4
StatePublished - Dec 1 1993
EventProceedings of the 1993 9th IEEE International Pulsed Power Conference. Part 2 (of 2) - Albuquerque, NM, USA
Duration: Jun 21 1993Jun 23 1993

Other

OtherProceedings of the 1993 9th IEEE International Pulsed Power Conference. Part 2 (of 2)
CityAlbuquerque, NM, USA
Period6/21/936/23/93

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Diodes
Fabrication
Switches
Thyristors
Carrier lifetime
Reactive ion etching
Cyclotrons
Surface morphology
Etching
Electrons
Lasers

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Xie, K., Zhao, J., Flemish, J., Burke, T., Buchwald, W., Kingsley, L., ... Weiner, M. (1993). Fabrication and characterization of 6H-SiC switching devices. 821-824. Paper presented at Proceedings of the 1993 9th IEEE International Pulsed Power Conference. Part 2 (of 2), Albuquerque, NM, USA, .
Xie, K. ; Zhao, Jian ; Flemish, J. ; Burke, T. ; Buchwald, W. ; Kingsley, L. ; Singh, H. ; Weiner, M. / Fabrication and characterization of 6H-SiC switching devices. Paper presented at Proceedings of the 1993 9th IEEE International Pulsed Power Conference. Part 2 (of 2), Albuquerque, NM, USA, .4 p.
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abstract = "Various 6H-SiC switches, including Schottky diodes, p+n diodes and thyristors have been fabricated and characterized using optical and electrical triggering. Mesa etching is accomplished by electron cyclotron resonant reactive ion etching using CF4 and O2 mixture, with a high etch rate of 80 nm/min and an excellent surface morphology. The optical triggering by 266 nm laser light yields a near 100{\%} switching efficiency in Pt and Au 6H-SiC Schottky diode switches, and a 75{\%} switching efficiency in p+n 6H-SiC diode switches. A breakdown field of more than 1×106 V/cm is obtained in p+n diode. Operation of SiC thyristor is demonstrated. A relatively long turn-on time of 170 ns is believed to be due to a long base region and a short carrier lifetime in 6H-SiC.",
author = "K. Xie and Jian Zhao and J. Flemish and T. Burke and W. Buchwald and L. Kingsley and H. Singh and M. Weiner",
year = "1993",
month = "12",
day = "1",
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Xie, K, Zhao, J, Flemish, J, Burke, T, Buchwald, W, Kingsley, L, Singh, H & Weiner, M 1993, 'Fabrication and characterization of 6H-SiC switching devices' Paper presented at Proceedings of the 1993 9th IEEE International Pulsed Power Conference. Part 2 (of 2), Albuquerque, NM, USA, 6/21/93 - 6/23/93, pp. 821-824.

Fabrication and characterization of 6H-SiC switching devices. / Xie, K.; Zhao, Jian; Flemish, J.; Burke, T.; Buchwald, W.; Kingsley, L.; Singh, H.; Weiner, M.

1993. 821-824 Paper presented at Proceedings of the 1993 9th IEEE International Pulsed Power Conference. Part 2 (of 2), Albuquerque, NM, USA, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - Fabrication and characterization of 6H-SiC switching devices

AU - Xie, K.

AU - Zhao, Jian

AU - Flemish, J.

AU - Burke, T.

AU - Buchwald, W.

AU - Kingsley, L.

AU - Singh, H.

AU - Weiner, M.

PY - 1993/12/1

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N2 - Various 6H-SiC switches, including Schottky diodes, p+n diodes and thyristors have been fabricated and characterized using optical and electrical triggering. Mesa etching is accomplished by electron cyclotron resonant reactive ion etching using CF4 and O2 mixture, with a high etch rate of 80 nm/min and an excellent surface morphology. The optical triggering by 266 nm laser light yields a near 100% switching efficiency in Pt and Au 6H-SiC Schottky diode switches, and a 75% switching efficiency in p+n 6H-SiC diode switches. A breakdown field of more than 1×106 V/cm is obtained in p+n diode. Operation of SiC thyristor is demonstrated. A relatively long turn-on time of 170 ns is believed to be due to a long base region and a short carrier lifetime in 6H-SiC.

AB - Various 6H-SiC switches, including Schottky diodes, p+n diodes and thyristors have been fabricated and characterized using optical and electrical triggering. Mesa etching is accomplished by electron cyclotron resonant reactive ion etching using CF4 and O2 mixture, with a high etch rate of 80 nm/min and an excellent surface morphology. The optical triggering by 266 nm laser light yields a near 100% switching efficiency in Pt and Au 6H-SiC Schottky diode switches, and a 75% switching efficiency in p+n 6H-SiC diode switches. A breakdown field of more than 1×106 V/cm is obtained in p+n diode. Operation of SiC thyristor is demonstrated. A relatively long turn-on time of 170 ns is believed to be due to a long base region and a short carrier lifetime in 6H-SiC.

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Xie K, Zhao J, Flemish J, Burke T, Buchwald W, Kingsley L et al. Fabrication and characterization of 6H-SiC switching devices. 1993. Paper presented at Proceedings of the 1993 9th IEEE International Pulsed Power Conference. Part 2 (of 2), Albuquerque, NM, USA, .