Fabrication and characterization of 6H-SiC switching devices

K. Xie, Jian Zhao, J. Flemish, T. Burke, W. Buchwald, L. Kingsley, H. Singh, M. Weiner

Research output: Contribution to conferencePaper

2 Scopus citations

Abstract

Various 6H-SiC switches, including Schottky diodes, p+n diodes and thyristors have been fabricated and characterized using optical and electrical triggering. Mesa etching is accomplished by electron cyclotron resonant reactive ion etching using CF4 and O2 mixture, with a high etch rate of 80 nm/min and an excellent surface morphology. The optical triggering by 266 nm laser light yields a near 100% switching efficiency in Pt and Au 6H-SiC Schottky diode switches, and a 75% switching efficiency in p+n 6H-SiC diode switches. A breakdown field of more than 1×106 V/cm is obtained in p+n diode. Operation of SiC thyristor is demonstrated. A relatively long turn-on time of 170 ns is believed to be due to a long base region and a short carrier lifetime in 6H-SiC.

Original languageEnglish (US)
Pages821-824
Number of pages4
StatePublished - Dec 1 1993
EventProceedings of the 1993 9th IEEE International Pulsed Power Conference. Part 2 (of 2) - Albuquerque, NM, USA
Duration: Jun 21 1993Jun 23 1993

Other

OtherProceedings of the 1993 9th IEEE International Pulsed Power Conference. Part 2 (of 2)
CityAlbuquerque, NM, USA
Period6/21/936/23/93

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Xie, K., Zhao, J., Flemish, J., Burke, T., Buchwald, W., Kingsley, L., Singh, H., & Weiner, M. (1993). Fabrication and characterization of 6H-SiC switching devices. 821-824. Paper presented at Proceedings of the 1993 9th IEEE International Pulsed Power Conference. Part 2 (of 2), Albuquerque, NM, USA, .