Fabrication and characterization of arc melted Si/B co-doped boron carbide

Qirong Yang, Chawon Hwang, Christopher J. Marvel, Ankur Chauhan, Vladislav Domnich, Atta U. Khan, Jerry C. LaSalvia, Martin P. Harmer, Kevin J. Hemker, Richard A. Haber

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Boron carbide undergoes stress-induced amorphization when subjected to large non-hydrostatic stresses that exceed its elastic limit. This has been proposed as the source for the abrupt loss of shear strength in boron carbide which limits its engineering applications. Si/B co-doping was suggested as one of the means to suppress stress-induced amorphization but this has not been experimentally verified. Here, by utilizing arc melting, we prepared Si/B co-doped boron carbide with increased Si content as compared to conventional methods. Through Raman analysis in conjunction with indention and elemental analyses based on SEM and STEM (ζ-factor microanalysis), it is suggested that Si/B co-doping is a promising avenue for suppressing stress-induced amorphization. A comprehensive characterization of microstructure, chemistry, and structural change of boron carbide as a result of Si/B co-doping was elucidated.

Original languageEnglish (US)
Pages (from-to)5156-5166
Number of pages11
JournalJournal of the European Ceramic Society
Volume39
Issue number16
DOIs
Publication statusPublished - Dec 2019

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

Keywords

  • Arc melting
  • Boron carbide
  • Si/B co-doping
  • Stress-induced amorphization
  • Transmission electron microscopy

Cite this