Fabrication and characterization of high current gain ((β=430) and high power (23 A-500 V) 4H-SiC darlington bipolar transistors

Yanbin Luo, Jianhui Zhang, P. Alexandrov, L. Fursin, J. H. Zhao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

In this paper, we reports a hybrid Darlington with not only a substantially increased current gain of 430 but also a substantially increase power rating of 23A-500V.

Original languageEnglish (US)
Title of host publication61st Device Research Conference, DRC 2003 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages25
Number of pages1
ISBN (Electronic)0780377273
DOIs
StatePublished - 2003
Event61st Device Research Conference, DRC 2003 - Salt Lake City, United States
Duration: Jun 23 2003Jun 25 2003

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2003-January
ISSN (Print)1548-3770

Other

Other61st Device Research Conference, DRC 2003
CountryUnited States
CitySalt Lake City
Period6/23/036/25/03

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Keywords

  • Bipolar transistors
  • Fabrication

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