Abstract
A ZnO photoconductive UV detector is fabricated on ZnO film grown by MOCVD based on Al/Au interdigital electrode. Nonalloyed Al/Au metallization scheme forms good ohmic contact on n-type ZnO. The dark and photoilluminated currents increase linearly with bias voltage. The cutoff wavelength of the detector is 368 nm, and it is also in response to the blue and green light. XPS analysis shows that there are oxygen vacancy and zinc interstitial in the ZnO film, and the nonstoichiometric ZnO film has influence on the photoresponse time of the detector.
Original language | English (US) |
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Pages (from-to) | 678-681 |
Number of pages | 4 |
Journal | Beijing Gongye Daxue Xuebao / Journal of Beijing University of Technology |
Volume | 33 |
Issue number | 7 |
State | Published - Jul 2007 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
Keywords
- Thin films
- Ultraviolet detectors
- Zinc oxide