Fabrication of highly reflecting epitaxy-ready Si-SiO2 Bragg reflectors

S. Akiyama, Felix J. Grawert, J. Liu, K. Wada, G. K. Celler, L. C. Kimerling, F. X. Kaertner

Research output: Contribution to journalArticle

14 Scopus citations


A complementary metal-oxide-semiconductor-compatible process for fabrication of highly reflecting Si-SiO2 Bragg mirrors with a crystalline top layer was developed. It comprises only one step of wafer-bonding and allows for subsequent epitaxial growth on the mirror. A six-pair reflector centered at 1400 nm with a 99% bandwidth of 700 nm and a surface roughness of 0.136 nm is demonstrated.

Original languageEnglish (US)
Pages (from-to)1456-1458
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number7
StatePublished - Jul 1 2005
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


  • High index contrast (HIC) reflector
  • Optical substrate
  • Photonic bandgap material
  • Silicon Bragg reflector

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    Akiyama, S., Grawert, F. J., Liu, J., Wada, K., Celler, G. K., Kimerling, L. C., & Kaertner, F. X. (2005). Fabrication of highly reflecting epitaxy-ready Si-SiO2 Bragg reflectors. IEEE Photonics Technology Letters, 17(7), 1456-1458. https://doi.org/10.1109/LPT.2005.850005