FACETED MELTING AND SUPERHEATING OF CRYSTALLINE Si IRRADIATED WITH INCOHERENT LIGHT.

G. K. Celler, K. A. Jackson, L. E. Trimble, McD Robinson, D. J. Lischner

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

The authors report and analyze the breakup of a crystalline silicon surface into solid and molten faceted segments by radiative heating. Melting starts at discrete sites since there is a nucleation barrier requiring superheating of the surface. Once started, the melt remains localized and does not encompass the entire surface because of the changes in optical properties of Si upon melting. It is estimated that superheating by less than 0. 5 K should be sufficient to stabilize faceted melt regions spaced 200 mu m apart. The preliminary measurements, however, indicate superheating by several degrees.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsJohn C.C. Fan, Noble M. Johnson
PublisherNorth-Holland
Pages409-414
Number of pages6
ISBN (Print)0444009035
StatePublished - 1984
Externally publishedYes

Publication series

NameMaterials Research Society Symposia Proceedings
Volume23
ISSN (Print)0272-9172

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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