Field Effect Real Space Transfer Transistor

Thomas E. Koscica, Jian H. Zhao

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We report demonstration of the first Field Effect Real Space transfer Transistor (FERST), a gated real space carrier transfer device. It is a dual output, multifunctional device which, depending on region of operation, demonstrates either of three characteristics: Traditional FET transconductance, sign reversing transconductance, or dual output with near complimentary transconductances. Additionally, the FERST structure provides a new means for exploring the physics of real space transfer.

Original languageEnglish (US)
Pages (from-to)196-198
Number of pages3
JournalIEEE Electron Device Letters
Volume16
Issue number5
DOIs
StatePublished - May 1995

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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