Abstract
We report demonstration of the first Field Effect Real Space transfer Transistor (FERST), a gated real space carrier transfer device. It is a dual output, multifunctional device which, depending on region of operation, demonstrates either of three characteristics: Traditional FET transconductance, sign reversing transconductance, or dual output with near complimentary transconductances. Additionally, the FERST structure provides a new means for exploring the physics of real space transfer.
Original language | English (US) |
---|---|
Pages (from-to) | 196-198 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 16 |
Issue number | 5 |
DOIs | |
State | Published - May 1995 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering