First-principles study of electronic and dielectric properties of ZrO 2 and HfO2

Xinyuan Zhao, David Vanderbilt

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

Using density-functional theory with ultrasoft pseudopotentials, we previously investigated the structural and electronic properties of the low-pressure (cubic, tetragonal, and monoclinic) phases of ZrO2 and HfO2, in order to elucidate phonon modes, Born effective charge tensors, and especially the lattice dielectric response in these phases. We now extend this previous work by carrying out similar calculations on the two high-pressure orthorhombic phases, and by providing density-of-states and band-gap information on all polymorphs. Our results show that the electronic structures and dielectric responses are strongly phase-dependent. In particular, the monoclinic phases of ZrO2 and HfO2 are found to have a strongly anisotropic dielectric tensor and a rather small orientational average (ε̄0) compared to the two other low-pressure phases. Our calculations show that ε̄0 is even smaller in the orthorhombic phases.

Original languageEnglish (US)
Pages (from-to)93-98
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume747
StatePublished - 2003
EventCrystalline Oxide-Silicon Heterostructures and Oxide Optoelectronics - Boston, MA, United States
Duration: Dec 2 2002Dec 4 2002

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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