Flexible plastic single-crystal Si CMOS

Zhenqiang Ma, Hao Chih Yuan, George Celler

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, the materials, processing and device characteristics of flexible Si CMOS on plastic substrates are reviewed. The methods to create transferrable single-crystal Si nanomembranes are described first followed by the description of doping and transfer techniques developed for the nanomembranes. The preliminary device characteristics of CMOS and inverters on plastic substrates are presented.

Original languageEnglish (US)
Title of host publicationICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages1009-1012
Number of pages4
DOIs
Publication statusPublished - Dec 1 2008
Externally publishedYes
Event2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
Duration: Oct 20 2008Oct 23 2008

Publication series

NameInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
CountryChina
CityBeijing
Period10/20/0810/23/08

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Ma, Z., Yuan, H. C., & Celler, G. (2008). Flexible plastic single-crystal Si CMOS. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 1009-1012). [4734723] (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734723