@inproceedings{4ef34001243e45dd96b016bd68669148,
title = "Formation and reduction of large growth pits on 100 mm 4° 4H-SiC",
abstract = "Large growth pits (LGPs) dependence of substrate quality, growth rate, and C/Si ratio have been discussed in the 4H-SiC epitaxial growth on 100 mm N-type 4H-SiC Si-face substrates misoriented by 4° toward [11-20] with a warm-wall planetary reactor. The formation and reduction of LGPs have been investigated by adjusting the growth process parameters. With the optimized process, perfect surface morphology with lower LGPs density has been obtained on the high quality substrate.",
keywords = "4H-SiC, C/Si ratio, Large growth pits, Planetary reactor, Warm-wall",
author = "Sun, {Yong Qiang} and Gan Feng and Kang, {Jun Yong} and Qian, {Wei Ning} and Lv, {Li Ping} and Li, {Yi Yang} and Li, {Kai Xi} and Zhao, {Jian H.}",
note = "Publisher Copyright: {\textcopyright} 2016 Trans Tech Publications, Switzerland.; 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 ; Conference date: 04-10-2015 Through 09-10-2015",
year = "2016",
doi = "10.4028/www.scientific.net/MSF.858.193",
language = "English (US)",
isbn = "9783035710427",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "193--196",
editor = "Fabrizio Roccaforte and Filippo Giannazzo and {La Via}, Francesco and Roberta Nipoti and Danilo Crippa and Mario Saggio",
booktitle = "Silicon Carbide and Related Materials 2015",
}