Formation and reduction of large growth pits on 100 mm 4° 4H-SiC

Yong Qiang Sun, Gan Feng, Jun Yong Kang, Wei Ning Qian, Li Ping Lv, Yi Yang Li, Kai Xi Li, Jian H. Zhao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Large growth pits (LGPs) dependence of substrate quality, growth rate, and C/Si ratio have been discussed in the 4H-SiC epitaxial growth on 100 mm N-type 4H-SiC Si-face substrates misoriented by 4° toward [11-20] with a warm-wall planetary reactor. The formation and reduction of LGPs have been investigated by adjusting the growth process parameters. With the optimized process, perfect surface morphology with lower LGPs density has been obtained on the high quality substrate.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2015
EditorsFabrizio Roccaforte, Filippo Giannazzo, Francesco La Via, Roberta Nipoti, Danilo Crippa, Mario Saggio
PublisherTrans Tech Publications Ltd
Pages193-196
Number of pages4
ISBN (Print)9783035710427
DOIs
StatePublished - 2016
Event16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy
Duration: Oct 4 2015Oct 9 2015

Publication series

NameMaterials Science Forum
Volume858
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
Country/TerritoryItaly
CitySicily
Period10/4/1510/9/15

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Keywords

  • 4H-SiC
  • C/Si ratio
  • Large growth pits
  • Planetary reactor
  • Warm-wall

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