Formation of monolithic masks for 0.25 μm x-ray lithography

G. K. Celler, L. E. Trimble, J. Frackoviak, C. W. Jurgensen, R. R. Kola, A. E. Novembre, G. R. Weber

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


We have constructed monolithic masks for proximity x-ray lithography by forming 1 μm thick polycrystalline Si membranes directly on glass support frames. Finished masks are 78 mm in diameter and ∼5 mm thick, with the Si membrane spanning 27 mm. The monolithic design provides simple processing and unprecedented flatness of 30 nm across the membrane and <500 nm across the entire disk. Mask blanks were metallized with 500 nm of W that was sputter deposited under conditions that hold the film stress <50 MPa. Tungsten was patterned by reactive ion etching to form features as small as 0.25 μm.

Original languageEnglish (US)
Pages (from-to)3105-3107
Number of pages3
JournalApplied Physics Letters
Issue number24
StatePublished - 1991
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Formation of monolithic masks for 0.25 μm x-ray lithography'. Together they form a unique fingerprint.

Cite this