Formation of p-n junctions and Ohmic contacts at laser processed Pt-Si surface layers

C. J. Doherty, T. E. Seidel, H. J. Leamy, G. K. Celler

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Pt-Si alloy layers are formed during 130-nsec pulsed irradiation of Pt coated Si with light from a Nd: YAG laser. The alloys form via surface melting and resolidifaction. Laser processing of arsenic of ion implanted, p-type silicon results in formation of a p-n+/Pt-Si structure that exhibits rectifying electrical behavior. This structure arises because the As and Pt impurities are zone refined to different extents during resolidification of the molten surface layer.

Original languageEnglish (US)
Pages (from-to)2718-2721
Number of pages4
JournalJournal of Applied Physics
Volume51
Issue number5
DOIs
StatePublished - Dec 1 1980
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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