Pt-Si alloy layers are formed during 130-nsec pulsed irradiation of Pt coated Si with light from a Nd: YAG laser. The alloys form via surface melting and resolidifaction. Laser processing of arsenic of ion implanted, p-type silicon results in formation of a p-n+/Pt-Si structure that exhibits rectifying electrical behavior. This structure arises because the As and Pt impurities are zone refined to different extents during resolidification of the molten surface layer.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)