Frequency Doubling in GaAs/AlGaAs Field Effect Transistor Using Real Space Transfer

Thomas E. Koscica, Jian H. Zhao

Research output: Contribution to journalArticle

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Abstract

A modified field effect transistor (FET) topology is used which enhances the real space transfer of carrier out of the channel toward a special collector terminal. The drain current rises, peaks, and then reduces as gate voltage is increased due to a steep rise in collector current with gate voltage. When biased near the peak, the ac drain current induced by the gate is folded over becoming frequency doubled. The device exhibits functional multiplexing being operable as either a positive transconductance, negative transconductance, or frequency doubling element setable via quiescent gate voltage.

Original languageEnglish (US)
Pages (from-to)545-547
Number of pages3
JournalIEEE Electron Device Letters
Volume16
Issue number12
DOIs
Publication statusPublished - Jan 1 1995

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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