GaN and AlGaN metal-semiconductor-metal photodetectors

I. Ferguson, C. A. Tran, R. F. Karlicek, Z. C. Feng, R. Stall, S. Liang, Yicheng Lu, C. Joseph

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Abstract

GaN based interdigital metal-semiconductor-metal (MSM) photodetectors have been successfully fabricated. The MSM structures were patterned on highly resistive GaN and the ternary compound, AlGaN. For the highly resistive GaN detector, the lowest dark current is ∼0.1 nA and the UV responsivity of the device was about 460 A W-1 at a DC bias of 5 V. The AlGaN with 24% Al exhibited larger gains of up to 106 A W-1 at 20 V, but at a very high dark current, 1 mA, and very long detector responses, greater than 60 s. The high gain in this device is not well understood. The preliminary measurements indicate that tunneling occurs at high electric fields since a negative temperature coefficient for the breakdown voltage was observed.

Original languageEnglish (US)
Pages (from-to)311-314
Number of pages4
JournalMaterials Science and Engineering B
Volume50
Issue number1-3
DOIs
Publication statusPublished - Dec 18 1997

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ferguson, I., Tran, C. A., Karlicek, R. F., Feng, Z. C., Stall, R., Liang, S., ... Joseph, C. (1997). GaN and AlGaN metal-semiconductor-metal photodetectors. Materials Science and Engineering B, 50(1-3), 311-314. https://doi.org/10.1016/S0921-5107(97)00196-7