Gate coupling and floating-body effects in thin-film SOI MOSFETs

S. S. Tsao; D. R. Myers; G. K. Celler

doi:10.1049/el:19880160

Gate coupling and floating-body effects in thin-film SOI MOSFETs

S. S. Tsao, D. R. Myers, G. K. Celler

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Thin-film, silicon-on-insulator (SOI) MOSFETs exhibit bias-dependent suppression of the kink effect. For zero or positive back gate bias, the well known kink effect is suppressed but the threshold voltage depends strongly on back gate bias. For sufficiently negative back gate bias (as might be required for total-dose radiation-hard applications), the kink effect re-emerges and the threshold voltage depends instead on the applied drain voltage.

Original language	English (US)
Pages (from-to)	238-239
Number of pages	2
Journal	Electronics Letters
Volume	24
Issue number	4
DOIs	https://doi.org/10.1049/el:19880160
State	Published - 1988
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Keywords

Radiation and radiation effects
Semiconductor devices and materials
Transistors

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10.1049/el:19880160

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abstract = "Thin-film, silicon-on-insulator (SOI) MOSFETs exhibit bias-dependent suppression of the kink effect. For zero or positive back gate bias, the well known kink effect is suppressed but the threshold voltage depends strongly on back gate bias. For sufficiently negative back gate bias (as might be required for total-dose radiation-hard applications), the kink effect re-emerges and the threshold voltage depends instead on the applied drain voltage.",

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author = "Tsao, {S. S.} and Myers, {D. R.} and Celler, {G. K.}",

year = "1988",

doi = "10.1049/el:19880160",

language = "English (US)",

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pages = "238--239",

journal = "Electronics Letters",

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T1 - Gate coupling and floating-body effects in thin-film SOI MOSFETs

AU - Tsao, S. S.

AU - Myers, D. R.

AU - Celler, G. K.

PY - 1988

Y1 - 1988

N2 - Thin-film, silicon-on-insulator (SOI) MOSFETs exhibit bias-dependent suppression of the kink effect. For zero or positive back gate bias, the well known kink effect is suppressed but the threshold voltage depends strongly on back gate bias. For sufficiently negative back gate bias (as might be required for total-dose radiation-hard applications), the kink effect re-emerges and the threshold voltage depends instead on the applied drain voltage.

AB - Thin-film, silicon-on-insulator (SOI) MOSFETs exhibit bias-dependent suppression of the kink effect. For zero or positive back gate bias, the well known kink effect is suppressed but the threshold voltage depends strongly on back gate bias. For sufficiently negative back gate bias (as might be required for total-dose radiation-hard applications), the kink effect re-emerges and the threshold voltage depends instead on the applied drain voltage.

KW - Radiation and radiation effects

KW - Semiconductor devices and materials

KW - Transistors

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DO - 10.1049/el:19880160

M3 - Article

AN - SCOPUS:0023961198

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VL - 24

SP - 238

EP - 239

JO - Electronics Letters

JF - Electronics Letters

IS - 4

ER -

Gate coupling and floating-body effects in thin-film SOI MOSFETs

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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