@inproceedings{ab20c637ecf1439dba1e5cf1e04f96d7,
title = "Gate metal-induced diffusion and interface reactions in Hf oxide films on Si",
abstract = "When metal electrodes are deposited on a high-κ metal-oxide/SiO 2/Si stack, chemical interactions may occur both at the metal/high-κ and the high-κ/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO2/SiO2/Si stacks causes reduction of the SiO2 interfacial layer and (to a lesser extent) the HfO 2 layer. Silicon atoms initially present in the interfacial SiO 2 layer incorporate into the bottom of the high-κ layer. Some evidence for titanium-silicon interdiffusion through the high-κ film in the presence of a titanium gate in crystalline HfO2 films is also reported.",
keywords = "Alternative gate dielectrics, Ion beam analysis, Oxygen diffiision",
author = "Goncharova, {Lyudmila V.} and Mateus Dalponte and Ozgur Celik and Eric Garfunkel and Torgny Gustafsson and Lysaght, {Pat S.} and Bersuker, {Gennadi I.}",
year = "2007",
doi = "10.1063/1.2799392",
language = "English (US)",
isbn = "0735404410",
series = "AIP Conference Proceedings",
pages = "324--328",
booktitle = "CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS",
note = "CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology ; Conference date: 27-03-2007 Through 29-03-2007",
}