Gate-tunable phase transitions in thin flakes of 1T-TaS2

Yijun Yu, Fangyuan Yang, Xiu Fang Lu, Ya Jun Yan, Yong Heum Cho, Liguo Ma, Xiaohai Niu, Sejoong Kim, Young Woo Son, Donglai Feng, Shiyan Li, Sang Wook Cheong, Xian Hui Chen, Yuanbo Zhang

Research output: Contribution to journalArticlepeer-review

373 Scopus citations

Abstract

The ability to tune material properties using gating by electric fields is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as the observation of gate electric-field-induced superconductivity and metal-insulator transitions. Here, we describe an ionic field-effect transistor (termed an iFET), in which gate-controlled Li ion intercalation modulates the material properties of layered crystals of 1T-TaS2. The strong charge doping induced by the tunable ion intercalation alters the energetics of various charge-ordered states in 1T-TaS2 and produces a series of phase transitions in thin-flake samples with reduced dimensionality. We find that the charge-density wave states in 1T-TaS2 collapse in the two-dimensional limit at critical thicknesses. Meanwhile, at low temperatures, the ionic gating induces multiple phase transitions from Mott-insulator to metal in 1T-TaS2 thin flakes, with five orders of magnitude modulation in resistance, and superconductivity emerges in a textured charge-density wave state induced by ionic gating. Our method of gate-controlled intercalation opens up possibilities in searching for novel states of matter in the extreme charge-carrier-concentration limit.

Original languageEnglish (US)
Pages (from-to)270-276
Number of pages7
JournalNature Nanotechnology
Volume10
Issue number3
DOIs
StatePublished - Mar 5 2015

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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