TY - JOUR
T1 - Gate-tunable quantum Hall effects in defect-suppressed B i2 S e3 films
AU - Koirala, Nikesh
AU - Salehi, Maryam
AU - Moon, Jisoo
AU - Oh, Seongshik
N1 - Funding Information:
This work is supported by the Gordon and Betty Moore Foundation's EPiQS Initiative (GBMF4418) and National Science Foundation (NSF) Grant No. EFMA-1542798. A portion of this work was performed at the National High Magnetic Field Laboratory which is supported by NSF Cooperative Agreement No. DMR-1157490 and the State of Florida.
Publisher Copyright:
© 2019 American Physical Society.
PY - 2019/8/5
Y1 - 2019/8/5
N2 - Despite many years of efforts, attempts to reach the quantum regime of topological surface states (TSS) on an electrically tunable topological insulator (TI) platform have so far failed on binary TI compounds such as Bi2Se3 due to high density of interfacial defects. Here, utilizing an optimal buffer layer on a gatable substrate, we demonstrate the first electrically tunable quantum Hall effects (QHE) on TSS of Bi2Se3. On the n side, well-defined QHE shows up, but it diminishes near the charge neutrality point (CNP) and completely disappears on the p side. Furthermore, around the CNP the system transitions from a metallic to a highly resistive state as the magnetic field is increased, whose temperature dependence indicates presence of an insulating ground state at high magnetic fields.
AB - Despite many years of efforts, attempts to reach the quantum regime of topological surface states (TSS) on an electrically tunable topological insulator (TI) platform have so far failed on binary TI compounds such as Bi2Se3 due to high density of interfacial defects. Here, utilizing an optimal buffer layer on a gatable substrate, we demonstrate the first electrically tunable quantum Hall effects (QHE) on TSS of Bi2Se3. On the n side, well-defined QHE shows up, but it diminishes near the charge neutrality point (CNP) and completely disappears on the p side. Furthermore, around the CNP the system transitions from a metallic to a highly resistive state as the magnetic field is increased, whose temperature dependence indicates presence of an insulating ground state at high magnetic fields.
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U2 - 10.1103/PhysRevB.100.085404
DO - 10.1103/PhysRevB.100.085404
M3 - Article
AN - SCOPUS:85070691476
VL - 100
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 8
M1 - 085404
ER -