Glycol-based sol-gel process for the fabrication of ferroelectric PZT thin films - Code: EP28

Carine Livage; Ahmad Safari; Lisa Klein

doi:10.1007/BF00486318

Glycol-based sol-gel process for the fabrication of ferroelectric PZT thin films - Code: EP28

Carine Livage, Ahmad Safari, Lisa Klein

School of Engineering, Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

A new sol-gel system using ethylene glycol was developed for the fabrication of PZT thin films with compositions near the morphotropic phase boundary Pb(Zr_0.52Ti_0.48)O₃. Ethylene glycol was used as both a chelating agent and a solvent to replace the highly toxic methoxyethanol used in previous formulations. Thin films were deposited by spin coating the solutions onto platinized silicon substrates. Films were completely crystallized by about 600°C and contained the ferroelectric perovskite phase. A dielectric constant of about 750-800 at 1 KHz was obtained for thin films of 0.3 μm thickness. The hysteresis measurements revealed a remanent polarization of 15 mC/cm² with a coercive field of 60 kV/cm.

Original language	English (US)
Pages (from-to)	605-609
Number of pages	5
Journal	Journal of Sol-gel Science and Technology
Volume	2
Issue number	1-3
DOIs	https://doi.org/10.1007/BF00486318
State	Published - Jan 1 1994

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Chemistry(all)
Biomaterials
Condensed Matter Physics
Materials Chemistry

Keywords

ethylene glycol
film: PZT
film: ferroelectric

Access to Document

10.1007/BF00486318

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abstract = "A new sol-gel system using ethylene glycol was developed for the fabrication of PZT thin films with compositions near the morphotropic phase boundary Pb(Zr0.52Ti0.48)O3. Ethylene glycol was used as both a chelating agent and a solvent to replace the highly toxic methoxyethanol used in previous formulations. Thin films were deposited by spin coating the solutions onto platinized silicon substrates. Films were completely crystallized by about 600°C and contained the ferroelectric perovskite phase. A dielectric constant of about 750-800 at 1 KHz was obtained for thin films of 0.3 μm thickness. The hysteresis measurements revealed a remanent polarization of 15 mC/cm2 with a coercive field of 60 kV/cm.",

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