Growth and characterization of ultrathin nitrided silicon oxide films

E. P. Gusev, H. C. Lu, E. L. Garfunkel, T. Gustafsson, M. L. Green

Research output: Contribution to journalArticlepeer-review

181 Scopus citations


This paper reviews recent progress in understanding microstructural and growth-mechanistic aspects of ultrathin (<4 nm) oxynitride films for gate dielectric applications. Different techniques for characterizing these films are summarized. We discuss several nitridation methods, including thermal (oxy)nitridation in NO, N2O, and N2 as well as a variety of deposition methods. We show that a basic understanding of the gas-phase and thin-film oxygen and nitrogen incorporation chemistries facilities the processing of layered oxynitride nanostructures with desirable electrical properties.

Original languageEnglish (US)
Pages (from-to)265-286
Number of pages22
JournalIBM Journal of Research and Development
Issue number3
StatePublished - May 1999

All Science Journal Classification (ASJC) codes

  • Computer Science(all)


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