Abstract
The growth and oxidation of ultra-thin Al films on the Re (0001) surface are studied by X-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS) and high resolution electron energy loss spectroscopy (HREELS). The first monolayer of Al grows in a two-dimensional fashion and almost completely covers the Re (0001) substrate at 300 K. Al films of thickness <15 Å are oxidized by annealing to 970 K in 1 × 10-4 Torr oxygen to form stoichiometric aluminium oxide films. LEIS results show that the oxide films formed at 970 K cover the substrate completely. Hexagonal LEED patterns are observed from the aluminium oxide films, consistent with ordered structures similar to those of crystalline α-or γ-Al2O3. The XPS Al 2s and O 1s binding energies of the aluminium oxide films increase as a function of the film thickness; this thickness-dependent shift may be related to Schottky barrier formation at the Al2O3/Re interface.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 337-352 |
| Number of pages | 16 |
| Journal | Surface Science |
| Volume | 365 |
| Issue number | 2 |
| DOIs | |
| State | Published - Sep 20 1996 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
Keywords
- Aluminium
- Aluminium Oxide
- Insulating films
- Low energy ion scattering (LEIS)
- Metal-insulator interfaces
- X-ray photoelectron spectroscopy