Growth and oxidation of ultra-thin Al films on the Re (0001) surface

Yutong Wu, Eric Garfunkel, Theodore E. Madey

Research output: Contribution to journalArticlepeer-review

65 Scopus citations


The growth and oxidation of ultra-thin Al films on the Re (0001) surface are studied by X-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS) and high resolution electron energy loss spectroscopy (HREELS). The first monolayer of Al grows in a two-dimensional fashion and almost completely covers the Re (0001) substrate at 300 K. Al films of thickness <15 Å are oxidized by annealing to 970 K in 1 × 10-4 Torr oxygen to form stoichiometric aluminium oxide films. LEIS results show that the oxide films formed at 970 K cover the substrate completely. Hexagonal LEED patterns are observed from the aluminium oxide films, consistent with ordered structures similar to those of crystalline α-or γ-Al2O3. The XPS Al 2s and O 1s binding energies of the aluminium oxide films increase as a function of the film thickness; this thickness-dependent shift may be related to Schottky barrier formation at the Al2O3/Re interface.

Original languageEnglish (US)
Pages (from-to)337-352
Number of pages16
JournalSurface Science
Issue number2
StatePublished - Sep 20 1996

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


  • Aluminium
  • Aluminium Oxide
  • Insulating films
  • Low energy ion scattering (LEIS)
  • Metal-insulator interfaces
  • X-ray photoelectron spectroscopy


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