TY - JOUR
T1 - Growth chemistry and interfacial properties of silicon oxynitride and metal oxide ultrathin films on silicon
AU - Lu, H. C.
AU - Gusev, E.
AU - Yasuda, N.
AU - Green, M.
AU - Alers, G.
AU - Garfunkel, E.
AU - Gustafsson, T.
N1 - Funding Information:
The work of the Rutgers group was in part supported by the SRC and the NSF (DMR-9705367 and EEC-9720424).
PY - 2000/10/9
Y1 - 2000/10/9
N2 - We summarize some recent work on the formation mechanisms, structure and composition of oxynitride and high-K films, as investigated by high-resolution medium-energy ion scattering (MEIS). We show that nitridation of a silicon oxide thin film takes place through transport of NO molecules to the oxide/silicon interface. Ta2O5 films on Si have a compositionally graded oxide, breaking up at high annealing temperatures. A thin buffer layer of Si3N4 can prevent this.
AB - We summarize some recent work on the formation mechanisms, structure and composition of oxynitride and high-K films, as investigated by high-resolution medium-energy ion scattering (MEIS). We show that nitridation of a silicon oxide thin film takes place through transport of NO molecules to the oxide/silicon interface. Ta2O5 films on Si have a compositionally graded oxide, breaking up at high annealing temperatures. A thin buffer layer of Si3N4 can prevent this.
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U2 - 10.1016/S0169-4332(00)00475-X
DO - 10.1016/S0169-4332(00)00475-X
M3 - Article
AN - SCOPUS:0034299316
SN - 0169-4332
VL - 166
SP - 465
EP - 468
JO - Applied Surface Science
JF - Applied Surface Science
IS - 1
ER -