Growth of 150 mm 4H-SiC epitaxial layer by a hot-wall reactor

Yong Qiang Sun, Gan Feng, Jun Yong Kang, Wei Ning Qian, Yi Yang Li, Kai Xi Li, Jian H. Zhao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


In this work we report the latest epitaxial growth of 150 mm 4H-SiC on 4° off-axis substrates by a commercial hot-wall reactor. A statistical analysis of more than 300 runs with an epi thickness range of 6μm~15μm shows that the average uniformities of the thickness and the doping concentration are 1.34% (sigma/mean) and 3.90% (sigma/mean), respectively, and the average 2 mm x 2 mm projected device yield is 97.79%. The growths of ~60 μm-thick 150 mm 4H-SiC epitaxial layers have also been carried out. The repeatability of this system for thick epitaxial layer growth has been verified, showing a run-to-run uniformity similar to that of the thin wafers. These results of 150 mm 4H-SiC epitaxial growths indicate that this comercial hot-wall reactor has the potential for mass production of large diameter 4H-SiC epitaxial wafers.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials, 2017
EditorsRobert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley, Aivars Lelis
PublisherTrans Tech Publications Ltd
Number of pages4
ISBN (Print)9783035711455
StatePublished - 2018
EventInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2017 - Columbia, United States
Duration: Sep 17 2017Sep 22 2017

Publication series

NameMaterials Science Forum
Volume924 MSF
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752


OtherInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2017
Country/TerritoryUnited States

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


  • 150 mm 4H-SiC
  • Hot-wall reactor
  • Surface morphology


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