@inproceedings{eea93d3904cc4ab5b316f18b453fef2e,
title = "Growth of 150 mm 4H-SiC epitaxial layer by a hot-wall reactor",
abstract = "In this work we report the latest epitaxial growth of 150 mm 4H-SiC on 4° off-axis substrates by a commercial hot-wall reactor. A statistical analysis of more than 300 runs with an epi thickness range of 6μm~15μm shows that the average uniformities of the thickness and the doping concentration are 1.34% (sigma/mean) and 3.90% (sigma/mean), respectively, and the average 2 mm x 2 mm projected device yield is 97.79%. The growths of ~60 μm-thick 150 mm 4H-SiC epitaxial layers have also been carried out. The repeatability of this system for thick epitaxial layer growth has been verified, showing a run-to-run uniformity similar to that of the thin wafers. These results of 150 mm 4H-SiC epitaxial growths indicate that this comercial hot-wall reactor has the potential for mass production of large diameter 4H-SiC epitaxial wafers.",
keywords = "150 mm 4H-SiC, Hot-wall reactor, Surface morphology",
author = "Sun, {Yong Qiang} and Gan Feng and Kang, {Jun Yong} and Qian, {Wei Ning} and Li, {Yi Yang} and Li, {Kai Xi} and Zhao, {Jian H.}",
note = "Funding Information: This work is partially supported by National Key R&D Program of China (No. 2016YFB0400403).; International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 ; Conference date: 17-09-2017 Through 22-09-2017",
year = "2018",
doi = "10.4028/www.scientific.net/MSF.924.76",
language = "English (US)",
isbn = "9783035711455",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "76--79",
editor = "Robert Stahlbush and Philip Neudeck and Anup Bhalla and Devaty, {Robert P.} and Michael Dudley and Aivars Lelis",
booktitle = "Silicon Carbide and Related Materials, 2017",
}