Growth of III-nitrides for photodetector applications

Ian Ferguson, C. A. Tran, R. F. Karlicek, Zhe Chuan Feng, Richard A. Stall, Shaohua Liang, W. Cai, Y. Li, Y. Liu, Y. Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations


Interdigital metal-semiconductor-metal (MSM) and p-n UV photodetectors have been successfully grown and fabricated from GaN based materials. The MSM devices were produced using two types of GaN; high-resistive GaN and Mg doped GaN. For the high-resistive GaN detector, the lowest dark current is approximately 0.1 nA and the UV responsivity of the device was about 460 A/W at a DC bias of 30 V. The Mg doped GaN exhibited larger gains, 1150 A/W at 2.0 V, but at much higher dark currents, 400 nA. The high gain in this device is not well understood but has attributed to an 'avalanche' effect and is under further investigation. The feasibility of a photovoltage detector structure based on alloys of GaN has also been proven. A GaN/GaInN structure exhibited a cut- off at 2.9 eV with a responsivity of 0.28 A/W at zero bias for an active region of only 500 angstrom thick.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsGail J. Brown, Manijeh Razeghi
PublisherSociety of Photo-Optical Instrumentation Engineers
Number of pages8
ISBN (Print)0819424102
StatePublished - 1997
Externally publishedYes
EventPhotodetectors: Materials and Devices II - San Jose, CA, USA
Duration: Feb 12 1997Feb 14 1997

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherPhotodetectors: Materials and Devices II
CitySan Jose, CA, USA

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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